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Conduction Mechanism and Improved Endurance in HfO 2 -Based RRAM with Nitridation Treatment.
Nanoscale Research Letters 2017 October 27
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2 -based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2 -based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo + ) which limit electron movement through the switching layer.
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