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Interface Structure, Band Alignment, and Built-In Potentials at LaFeO_{3}/n-SrTiO_{3} Heterojunctions.
Physical Review Letters 2016 November 26
Interface structure at polar-nonpolar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO_{3}/n-SrTiO_{3} system. We demonstrate via high-energy-resolution x-ray photoemission that epitaxial LaFeO_{3}/n-SrTiO_{3}(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO_{3} films. However, differences in the potential gradient within the SrTiO_{3} layer depending on polarity may promote hole diffusion into LaFeO_{3} for applications in photocatalysis.
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