Low-Voltage Operating Single-Wall Carbon Nanotube Thin-Film Transistors Using High Work Function Contacts on Flexible Substrates.

There have been constant attempts as regards high-performance thin-film transistors (TFTs) by improving the charge injection between the source/drain electrode (S/D) and the channel. In this paper, we investigate the effect of the electric contact on the device performance of single-wall carbon nanotube (SWCNT) TFTs employing the suitable work function material. In order to realize the electric contacts for the dominant hole injection between the S/D and the SWCNT active channel, a high work function material of molybdenum trioxide (MoO x ) fabricated by an optimized process are utilized. The contact resistance is extracted by plotting the width-normalized resistance of SWCNTTFT with Pd and MoO x contacts as a function of channel length. We also demonstrate low-voltage operating SWCNT TFTs on flexible polyimide substrates with the reduced electric contacts. Without a buffer film which has been widely used to improve the device performance of TFT on a flexible substrate, high-performance low-voltage operating SWCNT-TFTs were achieved.