Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics.

Inertial Confinement Fusion (ICF) is undergoing more detailed research to increase neutron yield and will require high resolution imaging near the target. Neutron damage to diagnostics remains a serious issue in understanding and achieving ICF. We have demonstrated that Gallium Nitride (GaN) optoelectronic devices have exceptional neutron radiation hardness, by systematic testing of neutron radiation effects in GaN devices and materials with elevated neutron fluence levels and a broad neutron energy spectrum. During the 2013-2017 run cycles at Los Alamos Neutron Science Center (LANSCE), we irradiated various GaN materials and devices with fast and thermal plus resonance neutrons at several beamlines. This paper presents a radiation hardness study for Aluminum Gallium Nitride and Gallium Nitride (AlGaN/GaN) deep UV LEDs irradiated at the LANSCE 4FP60R beamline. The fluence level was up to 2.4 × 1013 neutrons/cm2 for neutrons with energies greater than 0.1 MeV. The device performance was monitored in real time. After three years of irradiation studies, we found that the GaN devices maintained operation in the forward active region. The current and voltage relation ( I-V curves) varied insignificantly in the linear region. Our results demonstrate the radiation hardness needed for laser fusion diagnostics at least up to 1017 neutron yield per shot, if the diagnostics is placed 1 m away from the target, where the neutron fluence per shot is approximately 8 × 1011 n/cm2 . The GaN devices can operate for multiple shots.