We have located links that may give you full text access.
UV-induced formation of oxygen-derived dangling bonds on hydroxyl-terminated SiC.
Journal of Physics. Condensed Matter : An Institute of Physics Journal 2018 September 21
A combined theoretical and multi-technique experimental study was employed to comprehensively determine the electronic structure of 6H-SiC(0001) surfaces upon hydroxyl and oxygen termination. We demonstrate the UV-induced formation of single-coordinated oxygen radicals in on-top (OT) sites above the atoms of the uppermost silicon layer of the substrate on initially hydroxyl-terminated SiC. A suchlike configuration of oxygen radicals represents an unprecedented adsorbate-derived system of unpaired electrons, bearing analogy to silicon and carbon dangling bonds on clean, unreconstructed SiC surfaces. We evidence the presence of adsorbate-derived surface states within the fundamental band gap for both hydroxyl- and oxygen-terminated SiC. For hydroxyl termination, a hydrogen-induced unoccupied surface state is revealed consistently by inverse photoemission spectroscopy (IPES) and density-functional theory calculations employing self-interaction-corrected pseudopotentials (DFT-SIC). The formation of oxygen dangling bonds is accompanied by the occurrence of an occupied surface state derived from px- and py-orbitals associated with the unpaired electrons as proven by both ultraviolet photoemission spectroscopy (UPS) and DFT-SIC.
Full text links
Related Resources
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app
All material on this website is protected by copyright, Copyright © 1994-2024 by WebMD LLC.
This website also contains material copyrighted by 3rd parties.
By using this service, you agree to our terms of use and privacy policy.
Your Privacy Choices
You can now claim free CME credits for this literature searchClaim now
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app