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Effects of Vacancy Defects on the Electronic and Optical Properties of Monolayer PbSe.
Journal of Physical Chemistry Letters 2018 July 6
Defect engineering is promising for tailoring the properties of atomically thin materials. By creating defects via Se vacancies, we study the optoelectronic properties of monolayer PbSe. We obtain the single-particle properties using the density functional theory plus a first-principles-based typical medium approximation. The absorption spectra are explored by solving the Bethe-Salpeter equation. Our results reveal that monolayer PbSe is defect-sensitive but defect-tolerant. The latter fingerprint is due to the absence of defect-induced in-gap, localized states. Our results predict that Se vacancies are the dominant defect type in disordered PbSe monolayer. We observe that increasing Se vacancy concentrations δ renormalize the energy bandgap Eg , which increased from 0.21 eV for the pristine to as high as 0.45 eV at high δ. The high tunability of the optoelectronic properties of monolayer PbSe using defect-engineering makes this material a candidate for exploring flexible electronic with potential technological applications in nanoelectronics.
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