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Nonlinear optical property of a Bi-doped GaAs semiconductor saturable absorber.

Optics Express 2018 April 3
By using an Open-Aperture Z-scan technique with both femtosecond and nanosecond laser pulses at 1064nm, the nonlinear optical properties of GaAs and Bi-doped GaAs, including the saturable absorption property and reverse saturable absorption property are systematically measured and analyzed directly in detail. Compared to pure GaAs, Bi-doped GaAs has a lower saturation intensity, wider saturable absorption energy region, lower two-photon absorption coefficient, better saturable absorption response and stronger optical limiting response. The results suggest that the incorporation of Bismuth in GaAs is an effective way of improving the nonlinear optical properties of GaAs, which provide crucial experimental evidence for that the characteristics of the passively Q-switched laser with Bi-doped GaAs saturable absorber is better than pure GaAs.

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