Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO 3 /Nb:SrTiO 3 Epitaxial Heterojunctions.

Asymmetric resistive switching processes were observed in BaTiO3 /Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105  ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3 /Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.