Add like
Add dislike
Add to saved papers

Diamond FinFET without Hydrogen Termination.

Scientific Reports 2018 Februrary 16
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm-wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.

Full text links

We have located links that may give you full text access.
Can't access the paper?
Try logging in through your university/institutional subscription. For a smoother one-click institutional access experience, please use our mobile app.

For the best experience, use the Read mobile app

Mobile app image

Get seemless 1-tap access through your institution/university

For the best experience, use the Read mobile app

All material on this website is protected by copyright, Copyright © 1994-2024 by WebMD LLC.
This website also contains material copyrighted by 3rd parties.

By using this service, you agree to our terms of use and privacy policy.

Your Privacy Choices Toggle icon

You can now claim free CME credits for this literature searchClaim now

Get seemless 1-tap access through your institution/university

For the best experience, use the Read mobile app