Temperature Dependence of Oxide Semiconductor and Channel Effect of Thin Film Transistor.

ZTO was prepared on SiOC/ITO glass and the electrical characteristics were analyzed in accordance with the annealing temperature to research the temperature dependence and an amorphous structure. SiOC annealed at 150 °C as a gate insulator became an amorphous structure. The ZTO annealed at 150 °C had the capacitance without any variation. However, the capacitance of ZTO on SiOC annealed at 150 °C was increased due to the reduction of energy loss. ZTO/SiOC transistor was observed the ambipolar transfer characteristics with high stability and mobility in accordance with the decrement of drain voltages as a result of tunneling effect. Therefore it was obtained that the SiOC annealed at 150 °C means the highest Schottky barrier (SB) at the interface of ZTO/SiOC as the optimization parameter.