2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of <mml:math display="block"> <mml:mover accent="true"> <mml:mi>k</mml:mi> <mml:mo>→</mml:mo> </mml:mover> <mml:mo>⋅</mml:mo> </mml:math> <mml:math display="block"> <mml:mover accent="true"> <mml:mi>p</mml:mi> <mml:mo>→</mml:mo> </mml:mover> <mml:mo>⋅</mml:mo> </mml:math> formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.