We have located links that may give you full text access.
Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles.
Physical Chemistry Chemical Physics : PCCP 2018 Februrary 22
Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top electrode, the fabricated devices with a simple sandwich structure of indium tin oxide (ITO)/composite polymer/aluminum (Al) exhibited three distinct resistance states, which could be labeled as "OFF", "ON1" and "ON2" for ternary data storage application. The ITO/polystyrene (PS) + ZnO/Al devices can endure 3 × 104 read-cycles and exhibit a retention time of 104 s. The resistance-temperature dependence at different resistance states was investigated to confirm the temperature-dependent properties. The resistance of the "OFF" and "ON1" state reveals negative temperature dependence, manifesting a typical semiconductor characteristic. The resistance of the "ON2" state exhibits positive temperature dependence, showing metallic properties.
Full text links
Related Resources
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app
All material on this website is protected by copyright, Copyright © 1994-2024 by WebMD LLC.
This website also contains material copyrighted by 3rd parties.
By using this service, you agree to our terms of use and privacy policy.
Your Privacy Choices
You can now claim free CME credits for this literature searchClaim now
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app