Atomic Layer Deposition of V 1-x Mo x O 2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation.

V1-x Mox O2 thin films were fabricated by nanolamination of VO2 /MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium(IV) [V(NMe2 )4 ] and molybdenum hexacarbonyl(VI) [Mo(CO)6 ] were used as vanadium and molybdenum precursors, respectively. The dopant content of V1-x Mox O2 films was controlled by adjusting MoO3 cycle percentage (PMo ) in ALD pulse sequence, which varied from 2 to 10%. Effects of PMo on V1-x Mox O2 crystal structure, morphology, semiconductor-to-metal transition properties, and optical transmittance were studied. A linear reduction of phase transition temperature (Tc ) by approximately -11 °C/cycle % Mo was observed for V1-x Mox O2 films within PMo ≤ 5%. Notably, dramatic enhanced luminous transmittance (Tlum = 63.8%) and solar modulation (ΔTsol = 23.5%) were observed for V1-x Mox O2 film with PMo = 7%.