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Plasma CVD of hydrogenated boron-carbon thin films from triethylboron.
Journal of Chemical Physics 2018 January 22
Low-temperature chemical vapor deposition (CVD) of B-C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B-C films. Herein, we demonstrate plasma CVD of B-C thin films using triethylboron (TEB) as a single source precursor in an Ar plasma. We show that the film density and B/C ratio increases with increasing plasma power, reaching a density of 2.20 g/cm3 and B/C = 1.7. This is attributed to a more intense energetic bombardment during deposition and more complete dissociation of the TEB molecule in the plasma at higher plasma power. The hydrogen content in the films ranges between 14 and 20 at. %. Optical emission spectroscopy of the plasma shows that BH, CH, C2 , and H are the optically active plasma species from TEB. We suggest a plasma chemical model based on β-hydrogen elimination of C2 H4 to form BH3 , in which BH3 and C2 H4 are then dehydrogenated to form BH and C2 H2 . Furthermore, C2 H2 decomposes in the plasma to produce C2 and CH, which together with BH and possibly BH3-x (C2 H5 )x are the film forming species.
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