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Photo-assisted Hysteresis of Electronic Transport for ZnO Nanowire Transistors.

Nanotechnology 2018 January 19
Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environment and illumination conditions. These prominent properties have the promising potential in the nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behaviors in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, the light irradiation is of great importance on the charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. The carriers excited by light irradiation can dramatically promote the trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path of creating a memory functionality to other low-dimensional material systems.

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