Effect of Thermochemical Synthetic Conditions on the Structure and Dielectric Properties of Ga 1.9 Fe 0.1 O 3 Compounds.

We report on the tunable and controlled dielectric properties of iron (Fe)-doped gallium oxide (Ga2 O3 ; Ga1.9 Fe0.1 O3 , referred to as GFO) inorganic compounds. The GFO materials were synthesized using a standard high-temperature, solid-state chemical reaction method by varying the thermochemical processing conditions, namely, different calcination and sintering environments. Structural characterization by X-ray diffraction revealed that GFO compounds crystallize in the β-Ga2 O3 phase. The Fe doping has induced slight lattice strain in GFO, which is evident in structural analysis. The effect of the sintering temperature (Tsint ), which was varied in the range of 900-1200 °C, is significant, as revealed by electron microscopy analysis. Tsint influences the grain size and microstructure evolution, which, in turn, influences the dielectric and electrical properties of GFO compounds. The energy-dispersive X-ray spectrometry and mapping data demonstrate the uniform distribution of the elemental composition over the microstructure. The temperature- and frequency-dependent dielectric measurements indicate the characteristic features that are specifically due to Fe doping in Ga2 O3 . The spreading factor and relaxation time, calculated using Cole-Cole plots, are in the ranges of 0.65-0.76 and 10-4 s, respectively. The results demonstrate that densification and control over the microstructure and properties of GFO can be achieved by optimizing Tsint .