We have located links that may give you full text access.
Toward Scintillator High-Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager (SHARP-AMFPI): Initial fabrication and characterization.
Medical Physics 2018 Februrary
PURPOSE: We present the first prototype Scintillator High-Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager (SHARP-AMFPI). This detector includes a layer of avalanche amorphous Selenium (a-Se) (HARP) as the photoconductor in an indirect detector to amplify the signal and reduce the effects of electronic noise to obtain quantum noise-limited images for low-dose applications. It is the first time avalanche a-Se has been used in a solid-state imaging device and poses as a possible solution to eliminate the effects of electronic noise, which is crucial for low-dose imaging performance of AMFPI.
METHODS: We successfully deposited a solid-state HARP structure onto a 24 × 30 cm2 array of thin-film transistors (TFT array) with a pixel pitch of 85 μm. The HARP layer consists of 16 μm of a-Se with a hole-blocking and electron-blocking layer to prevent charge injection from the high-voltage bias and pixel electrodes, respectively. An electric field (ES e ) up to 105 V μm-1 was applied across the a-Se layer without breakdown. A 150 μm thick-structured CsI:Tl scintillator was used to form SHARP-AMFPI. The x-ray imaging performance is characterized using a 30 kVp Mo/Mo beam. We evaluate the spatial resolution, noise power, and detective quantum efficiency at zero frequency of the system with and without avalanche gain. The results are analyzed using cascaded linear system model (CLSM).
RESULTS: An avalanche gain of 76 ± 5 was measured at ES e = 105 V μm-1 . We demonstrate that avalanche gain can amplify the signal to overcome electronic noise. As avalanche gain is increased, image quality improves for a constant (0.76 mR) exposure until electronic noise is overcome. Our system is currently limited by poor optical transparency of our high-voltage electrode and long integrating time which results in dark current noise. These two effects cause high-spatial frequency noise to dominate imaging performance.
CONCLUSIONS: We demonstrate the feasibility of a solid-state HARP x-ray imager and have fabricated the largest active area HARP sensor to date. Procedures to reduce secondary quantum and dark noise are outlined. Future work will improve optical coupling and charge transport which will allow for frequency DQE and temporal metrics to be obtained.
METHODS: We successfully deposited a solid-state HARP structure onto a 24 × 30 cm2 array of thin-film transistors (TFT array) with a pixel pitch of 85 μm. The HARP layer consists of 16 μm of a-Se with a hole-blocking and electron-blocking layer to prevent charge injection from the high-voltage bias and pixel electrodes, respectively. An electric field (ES e ) up to 105 V μm-1 was applied across the a-Se layer without breakdown. A 150 μm thick-structured CsI:Tl scintillator was used to form SHARP-AMFPI. The x-ray imaging performance is characterized using a 30 kVp Mo/Mo beam. We evaluate the spatial resolution, noise power, and detective quantum efficiency at zero frequency of the system with and without avalanche gain. The results are analyzed using cascaded linear system model (CLSM).
RESULTS: An avalanche gain of 76 ± 5 was measured at ES e = 105 V μm-1 . We demonstrate that avalanche gain can amplify the signal to overcome electronic noise. As avalanche gain is increased, image quality improves for a constant (0.76 mR) exposure until electronic noise is overcome. Our system is currently limited by poor optical transparency of our high-voltage electrode and long integrating time which results in dark current noise. These two effects cause high-spatial frequency noise to dominate imaging performance.
CONCLUSIONS: We demonstrate the feasibility of a solid-state HARP x-ray imager and have fabricated the largest active area HARP sensor to date. Procedures to reduce secondary quantum and dark noise are outlined. Future work will improve optical coupling and charge transport which will allow for frequency DQE and temporal metrics to be obtained.
Full text links
Related Resources
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app
All material on this website is protected by copyright, Copyright © 1994-2024 by WebMD LLC.
This website also contains material copyrighted by 3rd parties.
By using this service, you agree to our terms of use and privacy policy.
Your Privacy Choices
You can now claim free CME credits for this literature searchClaim now
Get seemless 1-tap access through your institution/university
For the best experience, use the Read mobile app