Cross-polarization coupling terahertz time-domain spectroscopy in a semiconductor based on the Hall effect.

We propose a new type of terahertz time-domain spectroscopy in an isotropic semiconductor wafer applied by a magnetic field in which two cross-polarization THz pulses couple with each other via the Hall effect. We built a classic theoretic model to describe cross-polarization coupling THz spectroscopy (CPCTS). Numerical simulations show that the magnetic field can clearly affect the spectral features of the two THz pulses via the Hall effect in which both the magnitude and direction of the magnetic field and the thickness of the wafer play important roles. Using CPCTS, we present an improved method that is non-contact to measure the material parameters, such as the damping constant and carrier density of a semiconductor wafer, and discuss the possibility of THz functional devices. Finally, we describe an experimental scheme to guide CPCTS.