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High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.
Scientific Reports 2017 May 26
The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max , cutoff frequency f T , ratio f max /f T , forward transmission coefficient S 21 , and open-circuit voltage gain A v . All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max /f T > 3, A v > 30 dB, and S 21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.
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