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Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water.

J R Avila, A W Peters, Zhanyong Li, M A Ortuño, A B F Martinson, C J Cramer, J T Hupp, O K Farha
Dalton Transactions : An International Journal of Inorganic Chemistry 2017 May 10
To grow films of Cu2 O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

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