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Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al 2 O 3 sandwich structures.

Nanoscale 2017 March 3
Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2 O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (∼0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2 O3 and Sn/Al2 O3 . Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.

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