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Self-Assembly of the Lateral In 2 Se 3 /CuInSe 2 Heterojunction for Enhanced Photodetection.

Layered materials have been found to be promising candidates for next-generation microelectronic and optoelectronic devices due to their unique electrical and optical properties. The p-n junction is an elementary building block for microelectronics and optoelectronics devices. Herein, using the pulsed-laser deposition (PLD) method, we achieve pure In2 Se3 -based photodetectors and In2 Se3 /CuInSe2 -based photodetectors with a lateral p-n heterojunction. In comparison to that of the pure In2 Se3 -based photodetector, the photodetectors based on the In2 Se3 /CuInSe2 heterojunction exhibit a tremendous promotion of photodetection performance and obvious rectifying behavior. The photoresponsivity and external quantum efficiency of the fabricated heterojunction-based device under 532 nm light irradiation are 20.1 A/W and 4698%, respectively. These values are about 7.5 times higher than those of our fabricated pure In2 Se3 -based devices. We attribute this promotion of photodetection to the suitable band structures of In2 Se3 and CuInSe2 , which greatly promote the separation of photoexcited electron-hole pairs. This work suggests an effective way to form lateral p-n junctions, opening up a new scenario for designing and constructing high-performance optoelectronic devices.

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