Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor.

A top-gated graphene FET with an ultralow 1/f noise level of 1.8 × 10-12 μm2 Hz1- (f = 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/f noise in graphene-based applications.