Electronic properties and transistors of the NbS2-MoS2-NbS2 nanoribbon heterostructure.

Based on density function theory(DFT) and nonequilibrium Green's functions(NEGF), we construct a NbS2-MoS2-NbS2 nanoribbon inplane heterostructure. The effects of the channel length, width, chirality and vacancy of the heterostructure on the transport properties are systematically investigated. The electron transport of the armchair-edge heterostructure device shows ballistic transport properties, while the zigzag-edge heterostructure device exhibits resonance tunneling transport properties. Further study indicates the NbS2-MoS2-NbS2 field effect transistors(FETs) to be excellent ambipolar transistors. The FETs have high performances with current on/off ratio 4.7×10(5) and subthreshold swing 90mV/decade with the channel length m=16 and width n=6. The increase of the channel length will sharply reduce the off-state current and enhance the performances of the devices significantly.