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JOURNAL ARTICLE
RESEARCH SUPPORT, U.S. GOV'T, NON-P.H.S.
Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.
Scientific Reports 2016 December 8
Electron-heating induced by a tunable, supplementary dc-current (Idc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc , yielding negative giant-magnetoresistance at the lowest temperature and highest Idc . A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ1 , which undergoes sign reversal from positive to negative with increasing Idc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.
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