Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films.

Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1 Ga(μ-S)]3 (1) and [L2 Ga(μ-S)]2 (2) containing either N,C,N- or C,N-chelating ligands L1 or L2 (L1 is {2,6-(Me2 NCH2 )2 C6 H3 }- and L2 is {2-(Et2 NCH2 )-4,6-tBu2 -C6 H2 }- ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1 Ga(κ2 -S4 ) (3) was prepared and the unprecedented complex [{2-[CH{(CH2 )3 CH3 }(μ-OH)]-6-CH2 NMe2 }C6 H3 ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.