Synthesis and photoluminescence characteristics of Sm 3 + -doped Bi 4 Si 3 O 12 red-emitting phosphor.

A series of novel red-emitting Sm3 + -doped bismuth silicate phosphors, Bi4 Si3 O12 :xSm3 + (0.01 ≤ x ≤ 0.06), were prepared via the sol-gel route. The phase of the synthesized samples calcinated at 800 °C is isostructural with Bi4 Si3 O12 according to X-ray diffraction results. Under excitation with 405 nm light, some typical peaks of Sm3 + ions centered at 566, 609, 655 and 715 nm are found in the emission spectra of the Sm3 + -doped Bi4 Si3 O12 phosphors. The strongest peak located at 609 nm is due to 4 G5 /2 -6 H7 /2 transition of Sm3 + . The luminescence intensity reaches its maximum value when the Sm3 + ion content is 4 mol%. The results suggest that Bi4 Si3 O12 :Sm3 + may be a potential red phosphor for white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.