Study on the mechanism of a charge-coupled device detector irradiated by millisecond pulse laser under functional loss.

The damage mechanism of a CCD detector was studied by building an experimental system containing a millisecond pulse laser irradiating a CCD detector. The experimental results show that the damage on the CCD detector was mainly thermal damage, along with mechanical damage. A melting phenomenon was caused by the thermal damage, so that a crater was observed on the surface of the CCD detector. Caused by melting of the polysilicon electrodes and a temperature rise in the silicon dioxide, the shift register impedance values were sharply reduced. Most of the substrate clock signals were broken and disappeared due to melting of channels in the silicon substrate layer, which caused a functional loss for the CCD detector. The mechanical damage on the melting edge of the CCD detector created heave; the temperature gradient caused this damage. In this paper, the decrease in vertical shift register impedance values was consistent with previous test results.