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Research Support, Non-U.S. Gov't
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BN-Enabled Epitaxy of Pb(1-x)Sn(x)Se Nanoplates on SiO₂/Si for High-Performance Mid-Infrared Detection.

Qisheng Wang, Yao Wen, Fengrui Yao, Yun Huang, Zhenxing Wang, Molin Li, Xueying Zhan, Kai Xu, Fengmei Wang, Feng Wang, Jie Li, Kaihui Liu, Chao Jiang, Fengqi Liu, Jun He
Small 2015 October 29
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).

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