Read by QxMD icon Read


Jae Min Sohn, Hyungsang Kim, Hyunsik Im, Hyungbae Kim, Juwon Lee, Yoon Shon, N G Subramaniam, Taewon Kang, Deuk Young Kim, Hyun Cheol Koo, Joo-Hyeon Lee, Jing Dong Song, Chang-Soo Park, Eun Kyu Kim
The formation, including the density and height of the InFeP:Ag nanorods doped with noble metal Ag using an ion milling method, was preponderantly determined from transmission electron microscopy and x-ray diffraction analyses. We investigate, in particular, the enhanced ferromagnetism of the well-aligned InFeP:Ag nanorods. Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements were carried out in order to investigate the incorporation of Ag and to verify the local chemical bonding of the InFeP:Ag nanorods...
November 21, 2017: Nanotechnology
Jungho Ko, Jongill Hong
Engineering of interfacial structures has become important more than ever before to find new scientific observations and to create novel applications. Here, we show that the interface reconstructed by atomic layer-thick Mg insertion substantially improved the magneto-electrical properties of perpendicular magnetic tunnel junctions essential for modern spintronic applications. The 0.2-0.4 nm-thick Mg inserted between the MgO tunnel barrier and CoFeB ferromagnet restructured the interface in such ways as to protect the CoFeB from overoxidation, to strengthen the texture, to make the interfacial roughness smooth, and to relax the mechanical stress...
November 20, 2017: ACS Applied Materials & Interfaces
Alberto Brambilla, Andrea Picone, Dario Giannotti, Alberto Calloni, Giulia Berti, Gianlorenzo Bussetti, Simona Achilli, Guido Fratesi, Mario Italo Trioni, Giovanni Vinai, Piero Torelli, Giancarlo Panaccione, Lamberto Duò, Marco Finazzi, Franco Ciccacci
Interfaces between organic semiconductors and ferromagnetic metals offer intriguing opportunities in the rapidly developing field of organic spintronics. Understanding and controlling the spin-polarized electronic states at the interface is the key towards a reliable exploitation of this kind of systems. Here we propose an approach consisting in the insertion of a two-dimensional magnetic oxide layer at the interface, with the aim of both increasing the reproducibility of the interface preparation and offering a way for a further fine control over the electronic and magnetic properties...
November 17, 2017: Nano Letters
Thomas Brächer, Mathieu Fabre, Thomas Meyer, Tobias Fischer, Stéphane Auffret, Olivier Boulle, Ursula Ebels, Philipp Pirro, Gilles Gaudin
The miniaturization of CMOS devices becomes increasingly difficult due to fundamental limitations and the increase of leakage currents. Large research efforts are devoted to find alternative concepts that allow for a larger data-density and lower power consumption than conventional semiconductor approaches. Spin waves have been identified as a potential technology that can complement and outperform CMOS in complex logic applications, profiting from the fact that these waves enable wave computing on the nano-scale...
November 17, 2017: Nano Letters
Priyanka Garg, Indrani Choudhuri, Biswarup Pathak
Density functional theory calculations are performed to investigate the gas sensing properties (NO, NO2, NH3 and N2O) of pure and doped (B@, N@, and B-N@) stanene. Dispersion corrected (DFT-D3) density functional calculations show that doping improves the interaction between stanene and gas molecules. The extent of interaction between the system and gas molecules is further studied through charge density difference (CDD), electrostatic potential (ESP) and Bader charge analysis. The electronic properties of pure stanene + gases are studied with and without the effect of spin-orbit coupling...
November 17, 2017: Physical Chemistry Chemical Physics: PCCP
W Saenrang, B A Davidson, F Maccherozzi, J P Podkaminer, J Irwin, R D Johnson, J W Freeland, J Íñiguez, J L Schad, K Reierson, J C Frederick, C A F Vaz, L Howald, T H Kim, S Ryu, M V Veenendaal, P G Radaelli, S S Dhesi, M S Rzchowski, C B Eom
Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable...
November 17, 2017: Nature Communications
J D Clarkson, I Fina, Z Q Liu, Y Lee, J Kim, C Frontera, K Cordero, S Wisotzki, F Sanchez, J Sort, S L Hsu, C Ko, L Aballe, M Foerster, J Wu, H M Christen, J T Heron, D G Schlom, S Salahuddin, N Kioussis, J Fontcuberta, X Marti, R Ramesh
The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition...
November 13, 2017: Scientific Reports
Jan-Philipp Hanke, Frank Freimuth, Chengwang Niu, Stefan Blügel, Yuriy Mokrousov
Reliable and energy-efficient magnetization switching by electrically induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of spin-orbit torques and the Dzyaloshinskii-Moriya interaction in topologically nontrivial magnetic insulators can exceed by far that of conventional metals. In analogy to the quantum anomalous Hall effect, we explain this extraordinary response in the absence of longitudinal currents as hallmark of monopoles in the electronic structure of systems that are interpreted most naturally within the framework of mixed Weyl semimetals...
November 14, 2017: Nature Communications
Alan Molinari, Horst Hahn, Robert Kruk
The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La0...
November 13, 2017: Advanced Materials
Bimu Yao, Y S Gui, J W Rao, S Kaur, X S Chen, W Lu, Y Xiao, H Guo, K -P Marzlin, C -M Hu
The emerging field of cavity spintronics utilizes the cavity magnon polariton (CMP) induced by magnon Rabi oscillations. In contrast to a single-spin quantum system, such a cooperative spin dynamics in the linear regime is governed by the classical physics of harmonic oscillators. It makes the magnon Rabi frequency independent of the photon Fock state occupation, and thereby restricts the quantum application of CMP. Here we show that a feedback cavity architecture breaks the harmonic-oscillator restriction...
November 10, 2017: Nature Communications
Xiaotian Wang, Zhenxiang Cheng, Guodong Liu, Xuefang Dai, Rabah Khenata, Liying Wang, Abdelmadjid Bouhemadou
Magnetic Heusler compounds (MHCs) have recently attracted great attention since these types of material provide novel functionalities in spintronic and magneto-electronic devices. Among the MHCs, some compounds have been predicted to be spin-filter semiconductors [also called magnetic semiconductors (MSs)], spin-gapless semiconductors (SGSs) or half-metals (HMs). In this work, by means of first-principles calculations, it is demonstrated that rare earth-based equiatomic quaternary Heusler (EQH) compounds with the formula MCoVZ (M = Lu, Y; Z = Si, Ge) are new spin-filter semiconductors with total magnetic moments of 3 µB...
November 1, 2017: IUCrJ
Jan-Willem G Bos
Heusler materials have attracted a large amount of attention in the development of spintronic technologies. In this issue, Wang et al. [IUCrJ (2017), 4, 758-768] show how strain can be used to tune the band structure of these materials.
November 1, 2017: IUCrJ
Dong-Jun Kim, Chul-Yeon Jeon, Jong-Guk Choi, Jae Wook Lee, Srivathsava Surabhi, Jong-Ryul Jeong, Kyung-Jin Lee, Byong-Guk Park
Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness...
November 9, 2017: Nature Communications
Lei Fu, Yi Wan, Ning Tang, Yi-Min Ding, Jing Gao, Jiachen Yu, Hongming Guan, Kun Zhang, Weiying Wang, Caifeng Zhang, Jun-Jie Shi, Xiang Wu, Su-Fei Shi, Weikun Ge, Lun Dai, Bo Shen
Monolayer MoS2 is a promising material for optoelectronics applications owing to its direct bandgap, enhanced Coulomb interaction, strong spin-orbit coupling, unique valley pseudospin degree of freedom, etc. It can also be implemented for novel spintronics and valleytronics devices at atomic scale. The band structure of monolayer MoS2 is well known to have a direct gap at K (K') point, whereas the second lowest conduction band minimum is located at Λ point, which may interact with the valence band maximum at K point, to make an indirect optical bandgap transition...
November 2017: Science Advances
Yang Yang, Richard B Wilson, Jon Gorchon, Charles-Henri Lambert, Sayeef Salahuddin, Jeffrey Bokor
The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. We unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub-10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electrical switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques...
November 2017: Science Advances
Yi Wang, Dapeng Zhu, Yang Wu, Yumeng Yang, Jiawei Yu, Rajagopalan Ramaswamy, Rahul Mishra, Shuyuan Shi, Mehrdad Elyasi, Kie-Leong Teo, Yihong Wu, Hyunsoo Yang
Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1-1...
November 8, 2017: Nature Communications
Jaime Sánchez-Barriga, Ilya I Ogorodnikov, Mikhail V Kuznetsov, Andrey A Volykhov, Fumihiko Matsui, Carolien Callaert, Joke Hadermann, Nikolay I Verbitskiy, Roland J Koch, Andrei Varykhalov, Oliver Rader, Lada V Yashina
To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images...
November 8, 2017: Physical Chemistry Chemical Physics: PCCP
Juan Du, Congxin Xia, Wenqi Xiong, Tianxing Wang, Yu Jia, Jingbo Li
The lack of ferromagnetic (FM) van der Waals (vdW) heterostructures hinders the application of two-dimensional (2D) materials in spintronics, information memories and storage devices. Herein, we find theoretically that 2D transition-metal dichalcogenides-based vdW heterostructures, such as MoS2/VS2 and WS2/VS2, possess excellent characteristics of stable stacking configurations, FM semiconducting ground states, high Curie temperatures, staggered band alignment and a large band offset. Fortunately, 100% spin-polarized currents at the Fermi level can be achieved under certain positive external electric fields, which can filter the current into a single spin channel...
November 16, 2017: Nanoscale
Azar Aliabadi, Bernd Büchner, Vladislav Kataev, Tobias Rüffer
For future molecular spintronic applications the possibility to modify and tailor the magnetic properties of transition-metal complexes is very promising. One of such possibilities is given by the countless derivatization offered by carbon chemistry. They allow for altering chemical structures and, in doing so, to tune magnetic properties of molecular spin-carrying compounds. With emphasis on the interplay of the spin density distribution of mononuclear and magnetic superexchange couplings of trinuclear bis(oxamato)-type complexes we review on efforts on such magneto-structural correlations...
2017: Beilstein Journal of Nanotechnology
Yi Wang, Rajagopalan Ramaswamy, Mallikarjuna Motapothula, Kulothungasagaran Narayanapillai, Dapeng Zhu, Jiawei Yu, Thirumalai Venkatesan, Hyunsoo Yang
The two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e., spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current-induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ∼6...
November 13, 2017: Nano Letters
Fetch more papers »
Fetching more papers... Fetching...
Read by QxMD. Sign in or create an account to discover new knowledge that matter to you.
Remove bar
Read by QxMD icon Read

Search Tips

Use Boolean operators: AND/OR

diabetic AND foot
diabetes OR diabetic

Exclude a word using the 'minus' sign

Virchow -triad

Use Parentheses

water AND (cup OR glass)

Add an asterisk (*) at end of a word to include word stems

Neuro* will search for Neurology, Neuroscientist, Neurological, and so on

Use quotes to search for an exact phrase

"primary prevention of cancer"
(heart or cardiac or cardio*) AND arrest -"American Heart Association"