Yeon Ho Kim, Wei Jiang, Donghun Lee, Donghoon Moon, Hyun-Young Choi, June-Chul Shin, Yeonsu Jeong, Jong Chan Kim, Jaeho Lee, Woong Huh, Chang Yong Han, Jae-Pil So, Tae Soo Kim, Seong Been Kim, Hyun Cheol Koo, Gunuk Wang, Kibum Kang, Hong-Gyu Park, Hu Young Jeong, Seongil Im, Gwan-Hyoung Lee, Tony Low, Chul-Ho Lee
A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, we report a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2 ) channel and surface-oxidized metal gates such as nickel and copper...
April 22, 2024: Advanced Materials