Chao Zhou, Liyang Ma, Yanpeng Feng, Chang-Yang Kuo, Yu-Chieh Ku, Cheng-En Liu, Xianlong Cheng, Jingxuan Li, Yangyang Si, Haoliang Huang, Yan Huang, Hongjian Zhao, Chun-Fu Chang, Sujit Das, Shi Liu, Zuhuang Chen
In the realm of ferroelectric memories, HfO2 -based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2 . Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2 . Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma...
April 3, 2024: Nature Communications