keyword
https://read.qxmd.com/read/38647348/reconfigurable-ag-hfo-2-nio-pt-memristors-with-stable-synchronous-synaptic-and-neuronal-functions-for-renewable-homogeneous-neuromorphic-computing-system
#1
JOURNAL ARTICLE
Jiaqi Chen, Xingqiang Liu, Chang Liu, Lin Tang, Tong Bu, Bei Jiang, Yahui Qing, Yulu Xie, Yong Wang, Yongtao Shan, Ruxin Li, Cong Ye, Lei Liao
Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO2 /NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and neuronal functions...
April 22, 2024: Nano Letters
https://read.qxmd.com/read/38645003/pilot-trial-of-perampanel-on-peritumoral-hyperexcitability-and-clinical-outcomes-in-newly-diagnosed-high-grade-glioma
#2
Steven Tobochnik, Michael S Regan, Maria K C Dorotan, Dustine Reich, Emily Lapinskas, Md Amin Hossain, Sylwia A Stopka, Sandro Santagata, Melissa M Murphy, Omar Arnaout, Wenya L Bi, E Antonio Chiocca, Alexandra J Golby, Michael A Mooney, Timothy R Smith, Keith L Ligon, Patrick Y Wen, Nathalie Y R Agar, Jong Woo Lee
Background Glutamatergic neuron-glioma synaptogenesis and peritumoral hyperexcitability promote glioma growth in a positive feedback loop. The objective of this study was to evaluate the feasibility and estimated effect sizes of the AMPA-R antagonist, perampanel, on intraoperative electrophysiologic hyperexcitability and clinical outcomes. Methods An open-label trial was performed comparing perampanel to standard of care (SOC) in patients undergoing resection of newly-diagnosed radiologic high-grade glioma...
April 18, 2024: medRxiv
https://read.qxmd.com/read/38632304/enhanced-read-resolution-in-reconfigurable-memristive-synapses-for-spiking-neural-networks
#3
JOURNAL ARTICLE
Hritom Das, Catherine Schuman, Nishith N Chakraborty, Garrett S Rose
The synapse is a key element circuit in any memristor-based neuromorphic computing system. A memristor is a two-terminal analog memory device. Memristive synapses suffer from various challenges including high voltage, SET or RESET failure, and READ margin issues that can degrade the distinguishability of stored weights. Enhancing READ resolution is very important to improving the reliability of memristive synapses. Usually, the READ resolution is very small for a memristive synapse with a 4-bit data precision...
April 17, 2024: Scientific Reports
https://read.qxmd.com/read/38629964/a-profile-on-the-wise-cortical-strip-for-intraoperative-neurophysiological-monitoring
#4
JOURNAL ARTICLE
Johannes Sarnthein, Marian C Neidert
INTRODUCTION: During intraoperative neurophysiological monitoring in neurosurgery, brain electrodes are placed to record electrocorticography or to inject current for direct cortical stimulation. A low impedance electrode may improve signal quality. AREAS COVERED: We review here a brain electrode (WISE Cortical Strip, WCS®), where a thin polymer strip embeds platinum nanoparticles to create conductive electrode contacts. The low impedance contacts enable a high signal-to-noise ratio, allowing for better detection of small signals such as high-frequency oscillations (HFO)...
April 17, 2024: Expert Review of Medical Devices
https://read.qxmd.com/read/38627406/robust-compression-and-detection-of-epileptiform-patterns-in-ecog-using-a-real-time-spiking-neural-network-hardware-framework
#5
JOURNAL ARTICLE
Filippo Costa, Eline V Schaft, Geertjan Huiskamp, Erik J Aarnoutse, Maryse A Van't Klooster, Niklaus Krayenbühl, Georgia Ramantani, Maeike Zijlmans, Giacomo Indiveri, Johannes Sarnthein
Interictal Epileptiform Discharges (IED) and High Frequency Oscillations (HFO) in intraoperative electrocorticography (ECoG) may guide the surgeon by delineating the epileptogenic zone. We designed a modular spiking neural network (SNN) in a mixed-signal neuromorphic device to process the ECoG in real-time. We exploit the variability of the inhomogeneous silicon neurons to achieve efficient sparse and decorrelated temporal signal encoding. We interface the full-custom SNN device to the BCI2000 real-time framework and configure the setup to detect HFO and IED co-occurring with HFO (IED-HFO)...
April 16, 2024: Nature Communications
https://read.qxmd.com/read/38615052/optimal-sizing-and-location-of-grid-interfaced-pv-phes-and-ultra-capacitor-systems-to-replace-lfo-and-hfo-based-power-generations
#6
JOURNAL ARTICLE
Isaac Amoussou, Emmanuel Tanyi, TakeleFerede Agajie, Baseem Khan, Mohit Bajaj
The impacts of climate change, combined with the depletion of fossil fuel reserves, are forcing human civilizations to reconsider the design of electricity generation systems to gradually and extensively incorporate renewable energies. This study aims to investigate the technical and economic aspects of replacing all heavy fuel oil (HFO) and light fuel oil (LFO) thermal power plants connected to the electricity grid in southern Cameroon. The proposed renewable energy system consists of a solar photovoltaic (PV) field, a pumped hydroelectric energy storage (PHES) system, and an ultra-capacitor energy storage system...
April 13, 2024: Scientific Reports
https://read.qxmd.com/read/38600288/on-the-feasibility-of-rugose-lipid-microparticles-in-pressurized-metered-dose-inhalers-with-established-and-new-propellants
#7
JOURNAL ARTICLE
Zahra Minootan, Hui Wang, Patrick Connaughton, Kellisa Lachacz, Nicholas Carrigy, Mani Ordoubadi, David Lechuga-Ballesteros, Andrew R Martin, Reinhard Vehring
Pressurized metered dose inhalers (pMDIs) require optimized formulations to provide stable, consistent lung delivery. This study investigates the feasibility of novel rugose lipid particles (RLPs) as potential drug carriers in pMDI formulations. The physical stability of RLPs was assessed in three different propellants: the established HFA-134a and HFA-227ea and the new low global-warming-potential (GWP) propellant HFO-1234ze. A feedstock containing DSPC and calcium chloride was prepared without pore forming agent to spray dry two RLP batches at inlet temperatures of 55 °C (RLP55) and 75 °C (RLP75)...
April 10, 2024: AAPS PharmSciTech
https://read.qxmd.com/read/38594559/heavy-fuel-oil-contaminated-soil-remediation-by-individual-and-bioaugmentation-assisted-phytoremediation-with-medicago-sativa-and-with-cold-plasma-treated-m-sativa
#8
JOURNAL ARTICLE
Jūratė Žaltauskaitė, Rimas Meištininkas, Austra Dikšaitytė, Laima Degutytė-Fomins, Vida Mildažienė, Zita Naučienė, Rasa Žūkienė, Kazunori Koga
Developing an optimal environmentally friendly bioremediation strategy for petroleum products is of high interest. This study investigated heavy fuel oil (HFO)-contaminated soil (4 and 6 g kg-1 ) remediation by individual and combined bioaugmentation-assisted phytoremediation with alfalfa (Medicago sativa L.) and with cold plasma (CP)-treated M. sativa. After 14 weeks of remediation, HFO removal efficiency was in the range between 61 and 80% depending on HFO concentration and remediation technique...
April 10, 2024: Environmental Science and Pollution Research International
https://read.qxmd.com/read/38588404/from-gel-to-crystal-mechanism-of-hfo-2-and-zro-2-nanocrystal-synthesis-in-benzyl-alcohol
#9
JOURNAL ARTICLE
Eline Goossens, Olivia Aalling-Frederiksen, Pieter Tack, Dietger Van den Eynden, Zarah Walsh-Korb, Kirsten M Ø Jensen, Klaartje De Buysser, Jonathan De Roo
Nonaqueous sol-gel syntheses have been used to make many types of metal oxide nanocrystals. According to the current paradigm, nonaqueous syntheses have slow kinetics, thus favoring the thermodynamic (crystalline) product. Here we investigate the synthesis of hafnium (and zirconium) oxide nanocrystals from the metal chloride in benzyl alcohol. We follow the transition from precursor to nanocrystal through a combination of rheology, EXAFS, NMR, TEM, and X-ray total scattering (PDF analysis). Upon dissolving the metal chloride precursor, the exchange of chloride ligands for benzylalkoxide liberates HCl...
April 8, 2024: Journal of the American Chemical Society
https://read.qxmd.com/read/38576083/on-the-chemical-pathways-influencing-the-effective-global-warming-potential-of-commercial-hydrofluoroolefin-gases
#10
JOURNAL ARTICLE
Gabriel Salierno
The enforcement of a global hydrofluorocarbon (HFC) refrigerant phase down led to the introduction of hydrofluoroolefins (HFOs) as a low Global Warming Potential (GWP) substitute, given their low atmospheric lifetime. However, to this date it is not fully clear the long-term atmospheric fate of HFOs primary degradation products: trifluoro acetaldehyde (TFE), trifluoro acetyl fluoride (TFF), and trifluoroacetic acid (TFA). It particularly concerns the possibility of forming HFC-23, a potent global warming agent...
April 4, 2024: ChemSusChem
https://read.qxmd.com/read/38570498/enhanced-polarization-switching-characteristics-of-hfo-2-ultrathin-films-via-acceptor-donor-co-doping
#11
JOURNAL ARTICLE
Chao Zhou, Liyang Ma, Yanpeng Feng, Chang-Yang Kuo, Yu-Chieh Ku, Cheng-En Liu, Xianlong Cheng, Jingxuan Li, Yangyang Si, Haoliang Huang, Yan Huang, Hongjian Zhao, Chun-Fu Chang, Sujit Das, Shi Liu, Zuhuang Chen
In the realm of ferroelectric memories, HfO2 -based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2 . Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2 . Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma...
April 3, 2024: Nature Communications
https://read.qxmd.com/read/38561385/double-gate-structure-enabling-remote-coulomb-scattering-free-transport-in-atomic-layer-deposited-igo-thin-film-transistors-with-hfo-2-gate-dielectric-through-insertion-of-sio-2-interlayer
#12
JOURNAL ARTICLE
Cheol Hee Choi, Taikyu Kim, Min Jae Kim, Gwang-Bok Kim, Jeong Eun Oh, Jae Kyeong Jeong
In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a double-gate (DG) structure was developed using an atomic layer deposition route. The device consisting of 10-nm-thick IGO channel and 2/48-nm-thick SiO2 /HfO2 dielectric was designed to be suitable for a display backplane in augmented and virtual reality applications. The fabricated DG TFTs exhibit outstanding device performances with field-effect mobility (μFE ) of 65.1 ± 2.3 cm2 V-1  s-1 , subthreshold swing of 65 ± 1 mVdec-1 , and threshold voltage (VTH ) of 0...
April 1, 2024: Scientific Reports
https://read.qxmd.com/read/38531112/high-%C3%AE%C2%BA-dielectric-hfo-2-2d-semiconductor-hfse-2-gate-stack-for-low-power-steep-switching-computing-devices
#13
JOURNAL ARTICLE
Taeho Kang, Joonho Park, Hanggyo Jung, Haeju Choi, Sang-Min Lee, Nayeong Lee, Ryong-Gyu Lee, Gahye Kim, Seung-Hwan Kim, Hyung-Jun Kim, Cheol-Woong Yang, Jongwook Jeon, Yong-Hoon Kim, Sungjoo Lee
Herein, we report a high-quality gate stack (native HfO2 formed on 2D HfSe2 ) fabricated via plasma oxidation, realizing an atomically sharp interface with a suppressed interface trap density (Dit ∼ 5×1010 cm-2 eV-1 ). The chemically converted HfO2 exhibits dielectric constant, κ ∼ 23, resulting in low gate leakage current (∼10-3 A/cm2 ) at EOT ∼0.5 nm. Density functional calculations indicated that the atomistic mechanism for achieving a high-quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer-by-layer oxidation to proceed...
March 26, 2024: Advanced Materials
https://read.qxmd.com/read/38526847/integration-of-ultrathin-hafnium-oxide-with-a-clean-van-der-waals-interface-for-two-dimensional-sandwich-heterostructure-electronics
#14
JOURNAL ARTICLE
Yumei Jing, Xianfu Dai, Junqiang Yang, Xiaobin Zhang, Zhongwang Wang, Xiaochi Liu, Huamin Li, Yahua Yuan, Xuefan Zhou, Hang Luo, Dou Zhang, Jian Sun
Integrating high-κ dielectrics with a small equivalent oxide thickness (EOT) with two-dimensional (2D) semiconductors for low-power consumption van der Waals (vdW) heterostructure electronics remains challenging in meeting both interface quality and dielectric property requirements. Here, we demonstrate the integration of ultrathin amorphous HfO x sandwiched within vdW heterostructures by the selective thermal oxidation of HfSe2 precursors. The self-cleaning process ensures a high-quality interface with a low interface state density of 1011 -1012 cm-2 eV-1 ...
March 25, 2024: Nano Letters
https://read.qxmd.com/read/38517972/stochastic-neuro-fuzzy-system-implemented-in-memristor-crossbar-arrays
#15
JOURNAL ARTICLE
Tuo Shi, Hui Zhang, Shiyu Cui, Jinchang Liu, Zixi Gu, Zhanfeng Wang, Xiaobing Yan, Qi Liu
Neuro-symbolic artificial intelligence has garnered considerable attention amid increasing industry demands for high-performance neural networks that are interpretable and adaptable to previously unknown problem domains with minimal reconfiguration. However, implementing neuro-symbolic hardware is challenging due to the complexity in symbolic knowledge representation and calculation. We experimentally demonstrated a memristor-based neuro-fuzzy hardware based on TiN/TaO x /HfO x /TiN chips that is superior to its silicon-based counterpart in terms of throughput and energy efficiency by using array topological structure for knowledge representation and physical laws for computing...
March 22, 2024: Science Advances
https://read.qxmd.com/read/38517375/analytical-modelling-of-the-transport-in-analog-filamentary-conductive-metal-oxide-hfo-x-reram-devices
#16
JOURNAL ARTICLE
Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Matteo Galetta, Antonio La Porta, Bert Jan Offrein, Valeria Bragaglia
The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfOx redox-based resistive switching memory (ReRAM) represents a key technology. Despite device performance enhancements reported in literature, the underlying mechanism behind resistive switching is not fully understood. This work presents the first physics-based analytical model of the current transport and of the resistive switching in these devices...
March 22, 2024: Nanoscale Horizons: the Home for Rapid Reports of Exceptional Significance in Nanoscience and Nanotechnolgy
https://read.qxmd.com/read/38513155/multiphase-reset-induced-reliable-dual-mode-resistance-switching-of-the-ta-hfo-2-ruo-2-memristor
#17
JOURNAL ARTICLE
Dong Hoon Shin, Hyungjun Park, Néstor Ghenzi, Yeong Rok Kim, Sunwoo Cheong, Sung Keun Shim, Seongpil Yim, Tae Won Park, Haewon Song, Jung Kyu Lee, Byeong Su Kim, Taegyun Park, Cheol Seong Hwang
Higher functionality should be achieved within the device-level switching characteristics to secure the operational possibility of mixed-signal data processing within a memristive crossbar array. This work investigated electroforming-free Ta/HfO2 /RuO2 resistive switching devices for digital- and analog-type applications through various structural and electrical analyses. The multiphase reset behavior, induced by the conducting filament modulation and oxygen vacancy generation (annihilation) in the HfO2 layer by interacting with the Ta (RuO2 ) electrode, was utilized for the switching mode change...
March 21, 2024: ACS Applied Materials & Interfaces
https://read.qxmd.com/read/38482953/tin-au-hfo-2-au-multilayer-thin-films-with-tunable-hyperbolic-optical-response
#18
JOURNAL ARTICLE
Yizhi Zhang, Jianan Shen, Benson Kunhung Tsai, Xuanyu Sheng, Zedong Hu, Xinghang Zhang, Haiyan Wang
Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self-assembled HfO2 -Au/TiN-Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO2 and TiN layers forming the alternative layers of HfO2 -Au VAN and TiN-Au VAN...
March 14, 2024: Small Methods
https://read.qxmd.com/read/38473639/adsorption-of-toxic-metals-using-hydrous-ferric-oxide-nanoparticles-embedded-in-hybrid-ion-exchange-resins
#19
JOURNAL ARTICLE
Zizikazi Sodzidzi, Zebron Phiri, Jemal Fito Nure, Titus A M Msagati, Lueta-Ann de Kock
Acid mine drainage (AMD) is a major environmental problem caused by the release of acidic, toxic, and sulfate-rich water from mining sites. This study aimed to develop novel adsorbents for the removal of chromium (Cr(VI)), cadmium (Cd(II)), and lead (Pb(II)) from simulated and actual AMD using hybrid ion-exchange resins embedded with hydrous ferric oxide (HFO). Two types of resins were synthesized: anionic exchange resin (HAIX-HFO) for Cr(VI) removal and cationic exchange resin (HCIX-HFO) for Cd(II) and Pb(II) removal...
March 1, 2024: Materials
https://read.qxmd.com/read/38470750/dark-current-reduction-and-performance-improvements-in-graphene-silicon-heterojunction-photodetectors-obtained-using-a-non-stoichiometric-hfo-x-thin-oxide-layer
#20
JOURNAL ARTICLE
Tao Qu, Jibin Fan, Xing Wei
Graphene/silicon heterojunction photodetectors suffer from a high dark current due to the high surface states and low barrier height at the interface, which limits their application. In this study, we introduce an HfOx interfacial layer via magnetron sputtering to address this issue. With this new structure, the dark current is reduced by six times under a bias voltage of -2 V. Under 460 nm illumination, the responsivity is 0.228A/W, the detectivity is 1.15 × 1011 cmHz1/2 W-1 , and the noise equivalent power is 8...
February 25, 2024: Nanomaterials
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