Haoliang Sun, Haoliang Wang, Shaohua Dong, Shijie Dai, Xiaoguo Li, Xin Zhang, Liangliang Deng, Kai Liu, Fengcai Liu, Hua Tan, Kun Xue, Chao Peng, Jiao Wang, Yi Li, Anran Yu, Hongyi Zhu, Yiqiang Zhan
Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO3 interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO3 /CsFAMA/ITO transistors...
January 16, 2024: Nanoscale advances