Jinyong Wang, Yujing Ren, Ze Yang, Qiaoya Lv, Yu Zhang, Mingyue Zhang, Tiancheng Zhao, Deen Gu, Fucai Liu, Baoshan Tang, Weifeng Yang, Zhiqun Lin
Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen-rich SnO2 nanoflowers switching medium, enabled by seed-mediated wet chemistry, to overcome the ion migration issue for enhanced analog in-memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+ ) in the Ag/SnO2 /p++ -Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10-year extrapolation), and low switching variability (SV = 6...
March 15, 2024: Advanced Science (Weinheim, Baden-Wurttemberg, Germany)