Jiabiao Chen, Zhaochao Liu, Zunxian Lv, Yameng Hou, Xiang Chen, Lan Lan, Tong-Huai Cheng, Lei Zhang, Yingnan Duan, Huixia Fu, Xuewen Fu, Feng Luo, Jinxiong Wu
Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2 Si x Ge1- x O5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2 /SiO2 precursors...
April 14, 2024: Journal of the American Chemical Society