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Suresh Kumar Garlapati, Gabriel Cadilha Marques, Julia Gebauer, Simone Dehm, Mikhael Bruns, Markus Winterer, Mehdi Tahoori, Jasmin Aghassi, Horst Hahn, Subho Dasgupta
Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/ printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as, low process temperatures, short exposure time and thereby high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs)...
March 19, 2018: Nanotechnology
Seiji Obata, Minoru Sato, Keishi Akada, Koichiro Saiki
A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue...
March 16, 2018: Nanotechnology
Rafiq Ahmad, Nirmalya Tripathy, Min-Sang Ahn, Jin-Young Yoo, Yoon-Bong Hahn
Seed layer plays a crucial role to achieve high electrical conductivity and ensure higher performance of the devices. In this study, we report fabrication of a solution-gated field-effect transistor (FET) sensor based on zinc oxide nanorods (ZnO NRs) modified iron oxide nanoparticles (α-Fe2O3 NPs) grown on a highly conductive sandwich-like seed layer (ZnO seed layer/Ag nanowires/ZnO seed layer). The sandwich-like seed layer and ZnO NRs modification with α-Fe2O3 NPs provide excellent conductivity and prevent possible ZnO NRs surface damage from low pH enzyme immobilization, respectively...
March 16, 2018: ACS Sensors
Bin Peng, Wei Zheng, Jiantao Qin, Wanli Zhang
Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS₂, MoSe₂, and MoTe₂ may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay...
March 15, 2018: Materials
M Unterrainer, I Winkelmann, B Suchorska, A Giese, V Wenter, F W Kreth, J Herms, P Bartenstein, J C Tonn, N L Albert
The name of M. Unterrainer was inadvertently presented as M. Unterrrainer in the original article.
March 15, 2018: European Journal of Nuclear Medicine and Molecular Imaging
Jyun-Hong Chen, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen
Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS<sub>2</sub> through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions...
March 12, 2018: Nanotechnology
Zofia Iskierko, Krzysztof Noworyta, Piyush Sindhu Sharma
Molecular recognition, i.e., ability of one molecule to recognize another through weak bonding interactions, is one of the bases of life. It is often implemented to sensing systems of high merits. Preferential recognition of the analyte (guest) by the receptor (host) induces changes in physicochemical properties of the sensing system. These changes are measured by using suitable signal transducers. Because of possibility of miniaturization, fast response, and high sensitivity, field-effect transistors (FETs) are more frequently being used for that purpose...
March 6, 2018: Biosensors & Bioelectronics
Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed, Saeed-Uz-Zaman Khan, Quazi D M Khosru
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle DFT simulation has been considered to keep the model physically accurate for monolayer transition metal dichalcogenide channel FET...
March 9, 2018: Nanotechnology
Ren Iwata, Claudio Pascali, Kazunori Terasaki, Yoichi Ishikawa, Shozo Furumoto, Kazuhiko Yanai
High specific activity is often a significant requirement for radiopharmaceuticals. To achieve that with18 F-labeled probes, it is mandatory to start from no-carrier-added fluoride and to reduce to a minimum the amount of precursor in order to decrease the presence of any pseudo-carrier. In the present study a feasible and efficient method for microscale one-pot radiosynthesis of18 F-labeled probes is described. It allows a substantial reduction in precursor, solvent and reagents, thus reducing also possible side reaction in the case of base-sensitive precursors...
March 8, 2018: Journal of Labelled Compounds & Radiopharmaceuticals
Vikram Passi, Amit Gahoi, Boris V Senkovskiy, Danny Haberer, Felix R Fischer, Alexander Grueneis, Max C Lemme
We report on the experimental demonstration and electrical characterization of 7-armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30nm to 40nm. The density of the GNRs is high, so that transport can be assumed well above the percolation threshold...
March 8, 2018: ACS Applied Materials & Interfaces
Young-Hoon Cho, Min-Yeul Ryu, Kook Jin Lee, So Jeong Park, Jun Hee Choi, Byung Chul Lee, Wung-Yeon Kim, Gyu-Tae Kim
The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS<sub>2</sub> multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current is recovered to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation...
March 7, 2018: Nanotechnology
Antoine Verger, Christian P Filss, Philipp Lohmann, Gabriele Stoffels, Michael Sabel, Hans-J Wittsack, Elena Rota Kops, Norbert Galldiks, Gereon R Fink, Nadim J Shah, Karl-Josef Langen
OBJECTIVES: To compare the diagnostic performance of O-(2-18 F-fluoroethyl)-L-tyrosine (18 F-FET) PET and perfusion-weighted MR imaging (PWI) for the diagnosis of progressive or recurrent glioma. METHODS: Thirty-two pretreated gliomas (25 progressive or recurrent tumors, 7 treatment-related changes, TRC) were investigated with18 F-FET PET and PWI using a hybrid PET/MR scanner. Volumes of interest (VOIs) with a diameter of 16 mm were centered upon the maximum of abnormality in the tumor area in PET and PWI maps (rCBV, rCBF, MTT) and the contralateral unaffected hemisphere...
March 3, 2018: World Neurosurgery
Xinyuan Zhou, Liping Yang, Yuzhi Bian, Xiang Ma, Ning Han, Yunfa Chen
Nowadays, the detection of low concentration combustible methane gas has attracted great concern. In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. By optimizing the load resistance ( RL ), the response to methane of the commercial MP-4 sensor can be magnified ~15 times using this coupling circuit. At the same time, it decreases the limit of detection (LOD) from several hundred ppm to ~10 ppm methane, with the apparent response of 7.0 ± 0.2 and voltage signal of 1...
March 6, 2018: Sensors
Niharendu Mahapatra, Avi Ben-Cohen, Yonathan Vaknin, Alex Henning, Joseph Hayon, Klimentiy Anatoliy Shimanovich, Hayit Greenspan, Yossi Rosenwaks
For the past several decades, there is a growing demand for the development of low-power gas sensing technology for the selective detection of volatile organic compounds (VOCs), important for monitoring safety, pollution and healthcare. Here we report the selective detection of homologous alcohols and different functional groups containing VOCs using the electrostatically formed nanowire (EFN) sensor without any surface modification of the device. Selectivity towards specific VOC is achieved by training machine-learning based classifiers using the calculated changes in the threshold voltage and the drain-source on current, obtained from systematically controlled biasing of the surrounding gates (junction and back gates) of the field-effect transistors (FET)...
March 6, 2018: ACS Sensors
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang
The DRAM based on the dual-gate tunneling FET (DGTFET) has the advantages of capacitor-less structure and high retention time. In this paper, the optimization of spacer engineering for DGTFET DRAM is systematically investigated by Silvaco-Atlas tool to further improve its performance, including the reduction of reading "0" current and extension of retention time. The simulation results show that spacers at the source and drain sides should apply the low-k and high-k dielectrics, respectively, which can enhance the reading "1" current and reduce reading "0" current...
March 5, 2018: Nanoscale Research Letters
Baoshan Tang, Zhi Gen Yu, Li Huang, Jianwei Chai, Swee Liang Wong, Jie Deng, Weifeng Yang, Hao Gong, Shijie Wang, Kah-Wee Ang, Yong-Wei Zhang, Dongzhi Chi
Here we present a method for substitutional p-type doping in monolayer (1L) and few-layer (FL) WS2 using highly reactive nitrogen atoms. We demonstrate that the nitrogen-induced lattice distortion in atomically thin WS2 is negligible due to its low kinetic energy. The electrical characteristics of 1L/FL WS2 field-effect transistors (FETs) clearly show an n-channel to p-channel conversion with nitrogen incorporation. We investigate the defect formation energy and the origin of p-type conduction using first-principles calculations...
March 5, 2018: ACS Nano
Hyeongsu Choi, Jeongsu Lee, Seokyoon Shin, Juhyun Lee, Seungjin Lee, Hyunwoo Park, Sejin Kwon, Namgue Lee, Minwook Bang, Seung-Beck Lee, Hyeongtag Jeon
Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition (ALD) and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films...
March 2, 2018: Nanotechnology
Christopher J Benjamin, Suki Zhang, Zhihong Chen
We explored surface charge transfer interaction between a family of phthalocyanine (Pc) compounds and transition metal dichalcogenides (TMDs). Comparing the device characteristics of TMD field-effect transistors (FETs), we demonstrate both p-type and n-type doping of TMDs by tuning the work function of the metal substitution in the Pc compound. Our findings suggest a near linear correlation between the metal work function and doping level. Such doping predictability has yet to be achieved whereas we provide here the first report of its kind...
March 1, 2018: Nanoscale
Hui Wang, Yang Liu, Gang Liu
Mercury (Hg) and its compounds, originating from a variety of nature and anthropogenic source, are ubiquitous in the natural environment, which cause severe environmental contamination and pose irreversible harm to human health. Fast and accurate sensing approach is of significant importance for mercury detection. Here, a label-free biosensor using Hg(II)-induced cleavage of phosphorothioate (PS) modified RNA was exploited. We designed a specific single-stranded DNA embedded four PS-modified RNA (Hg-DPR) to improve the cleavage reaction yield, and then Hg-DPR was covalently linked with single-walled carbon nanotube field effect transistor (SWNTs/FET) via a peptide bond...
February 28, 2018: ACS Sensors
Anil Kumar Pulikkathodi, Indu Sarangadharan, Yi-Hong Chen, Geng-Yen Lee, Jen-Inn Chyi, Gwo-Bin Lee, Yu-Lin Wang
In this research, we have designed, fabricated and characterized an electrical double layer (EDL)-gated AlGaN/GaN high electron mobility transistor (HEMT) biosensor array to study the transmembrane potential changes of cells. The sensor array platform is designed to detect and count circulating tumor cells (CTCs) of colorectal cancer (CRC) and investigate cellular bioelectric signals. Using the EDL FET biosensor platform, cellular responses can be studied in physiological salt concentrations, thereby eliminating complex automation...
February 28, 2018: Lab on a Chip
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