Daniel K Angell, Shuo Li, Hendrik Utzat, Matti L S Thurston, Yin Liu, Jeremy Dahl, Robert Carlson, Zhi-Xun Shen, Nicholas Melosh, Robert Sinclair, Jennifer A Dionne
Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities...
April 2, 2024: Proceedings of the National Academy of Sciences of the United States of America