Kejun Chen, Steve W Johnston, P Craig Taylor, David W Mulder, Harvey L Guthrey, William Nemeth, San Theingi, Matthew Page, Markus Kaupa, David L Young, Sumit Agarwal, Paul Stradins
In monocrystalline Si (c-Si) solar cells, identification and mitigation of bulk defects are crucial to achieving a high photoconversion efficiency. To spectroscopically detect defects in the c-Si bulk, it is desirable to passivate the surface defects. Passivation of the c-Si surface with dielectrics such as Al2 O3 and SiN x requires deposition at elevated temperatures, which can influence defects in the bulk. Herein, we report on the passivation of different Czochralski (Cz) Si wafer surfaces by an organic copolymer, Nafion...
April 22, 2024: ACS Applied Materials & Interfaces