Zhiwei Xie, Ke Jiang, Shanli Zhang, Jianwei Ben, Mingrui Liu, Shunpeng Lv, Yang Chen, Yuping Jia, Xiaojuan Sun, Dabing Li
With the fast development of artificial intelligence (AI), Internet of things (IOT), etc, there is an urgent need for the technology that can efficiently recognize, store and process a staggering amount of information. The AlScN material has unique advantages including immense remnant polarization, superior temperature stability and good lattice-match to other III-nitrides, making it easy to integrate with the existing advanced III-nitrides material and device technologies. However, due to the large band-gap, strong coercive field, and low photo-generated carrier generation and separation efficiency, it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion, limiting its application in in-memory sensing and computing...
March 29, 2024: Light, Science & Applications