Dingyi Wu, Dong Wang, Daigao Chen, Jie Yan, Ziyue Dang, Jianchao Feng, Shiping Chen, Peng Feng, Hongguang Zhang, Yanfeng Fu, Lei Wang, Xiao Hu, Xi Xiao, Shaohua Yu
By using the flip-chip bonding technology, a high performances 3D-integrated silicon photonics receiver is demonstrated. The receiver consists of a high-speed germanium-silicon (Ge-Si) photodetector (PD) and a commercial linear transimpedance amplifiers (TIA). The overall 3 dB bandwidth of the receiver is around 38 GHz with appropriate gain. Based on this 3D-integrated receiver, the 56, 64, 90, 100 Gbit/s non-return-to-zero (NRZ) and 112, 128 Gbit/s four-level pulse amplitude (PAM-4) modulation clear openings of eye diagrams are experimentally obtained...
January 30, 2023: Optics Express