Liang Yu, Xinyue Liu, Meifei Chen, Junhao Peng, Ting Xu, Wei Gao, Mengmeng Yang, Chun Du, Jiandong Yao, Wei Song, Huafeng Dong, Jingbo Li, Zhaoqiang Zheng
Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers...
April 17, 2024: ACS Applied Materials & Interfaces