Jaimin Kang, Donghyeon Han, Kyungchul Lee, San Ko, Daekyu Koh, Chando Park, Jaesoo Ahn, Minrui Yu, Mahendra Pakala, Sujung Noh, Hansaem Lee, JoonHyun Kwon, Kab-Jin Kim, Jongsun Park, Soogil Lee, Jisung Lee, Byong-Guk Park
Magnetic random-access memory (MRAM), which stores information through control of the magnetization direction, offers promising features as a viable nonvolatile memory alternative, including high endurance and successful large-scale commercialization. Recently, MRAM applications have extended beyond traditional memories, finding utility in emerging computing architectures such as in-memory computing and probabilistic bits. In this work, we report highly reliable MRAM-based security devices, known as physical unclonable functions (PUFs), achieved by exploiting nanoscale perpendicular magnetic tunnel junctions (MTJs)...
May 8, 2024: ACS Nano