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Silicon nanowire

L Marseglia, K Saha, A Ajoy, T Schröder, D Englund, F Jelezko, R Walsworth, J L Pacheco, D L Perry, E S Bielejec, P Cappellaro
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample...
January 8, 2018: Optics Express
Laetitia Vincent, Doriane Djomani, Mariam Fakhfakh, Charles Renard, Benoit Belier, Daniel Bouchier, Gilles Patriarche
We report on an unprecedented formation of allotrope heterostructured Si nanowires by plastic deformation based on applied radial compressive stresses inside a surrounding matrix. Si nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal 2H-allotrope. The transformation is thermally activated above 500°C and is clearly driven by a shear-stress relief occurring in parallel shear-bands lying on {115} planes. We have studied the influence of temperature and axial orientation of nanowires The observations are consistent with a martensitic phase transformation but the finding leads to a clear evidence of a different mechanism of deformation-induced phase transformation in Si nanowires with respect to their bulk counterpart...
January 12, 2018: Nanotechnology
Jun-Young Park, Byung-Hyun Lee, Geon-Beom Lee, Hagyoul Bae, Yang-Kyu Choi
This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling current-induced Joule heat in a p-i-n diode, comprised of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a sub-structure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors...
January 11, 2018: ACS Applied Materials & Interfaces
Bi-Shen Lee, Pi-Chen Lin, Ding-Zheng Lin, Ta-Jen Yen
We present a three-dimensional patterned (3DP) multifunctional substrate with the functions of ultra-thin layer chromatography (UTLC) and surface enhanced Raman scattering (SERS), which simultaneously enables mixture separation, target localization and label-free detection. This multifunctional substrate is comprised of a 3DP silicon nanowires array (3DP-SiNWA), decorated with silver nano-dendrites (AgNDs) atop. The 3DP-SiNWA is fabricated by a facile photolithographic process and low-cost metal assisted chemical etching (MaCE) process...
January 11, 2018: Scientific Reports
Yan Jin, Anran Gao, Qing-Hui Jin, Tie Li, Yuelin Wang, Jian-Long Zhao
In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane (MPTMS) serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, the detection limit as low as 1 ppt was obtained. A linear relationship (R2=0.9838) between log(CHg2+) and device current change from 1 ppt to 5 ppm was observed...
January 11, 2018: Nanotechnology
Hyunseok Kim, Dingkun Ren, Alan Farrell, Diana Huffaker
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires - nucleation at low temperature followed by nanowire elongation at high temperature - almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100 %. A 100 % growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature...
January 4, 2018: Nanotechnology
Qinqin Huang, Yin Wang, Xingxiang Chen, Yimeng Wang, Zhiqiang Li, Shiming Du, Lianrong Wang, Shi Chen
Circulating tumor cells (CTCs) are cancer cells that shed from a primary tumor and circulate in the bloodstream. As a form of "tumor liquid biopsy", CTCs provide important information for the mechanistic investigation of cancer metastasis and the measurement of tumor genotype evolution during treatment and disease progression. However, the extremely low abundance of CTCs in the peripheral blood and the heterogeneity of CTCs make their isolation and characterization major technological challenges. Recently, nanotechnologies have been developed for sensitive CTC detection; such technologies will enable better cell and molecular characterization and open up a wide range of clinical applications, including early disease detection and evaluation of treatment response and disease progression...
2018: Nanotheranostics
Feng Yi, Ana Stevanovic, William A Osborn, A Kolmakov, David A LaVan
We have developed a versatile nanocalorimeter sensor which allows imaging and electrical measurements of samples under different gaseous environments using the scanning electron microscope (SEM) and can simultaneously measure the sample temperature and associated heat of reaction. This new sensor consists of four independent heating/sensing elements for nanocalorimetry and eight electrodes for electrical measurements, all mounted on a 50 nm thick, 250 μm × 250 μm suspended silicon nitride membrane. This membrane is highly electron transparent and mechanically robust enabling in situ SEM observation under realistic temperatures, environmental conditions and pressures up to one atmosphere...
November 2017: Materials Horizons
Jason Giuliani, John Cadena, Carlos Monton
We present a variant of the template-assisted electrodeposition method that enables the synthesis of large arrays of nanowires (NWs) on flat and curved substrates. This method uses ultra-thin (50 nm to 10 m) anodic aluminum oxide membranes as a template. We have developed a procedure that uses a two-polymer protective layer to transfer these templates onto almost any surface. We have applied this technique to the fabrication of large arrays of Ni and segmented composition Ni/Au NWs on silicon wafers, Cu tapes, and thin (0...
December 18, 2017: Nanotechnology
Aaron L Holsteen, Søren Raza, Pengyu Fan, Pieter G Kik, Mark L Brongersma
Subwavelength, high-refractive index semiconductor nanostructures support optical resonances that endow them with valuable antenna functions. Control over the intrinsic properties, including their complex refractive index, size, and geometry, has been used to manipulate fundamental light absorption, scattering, and emission processes in nanostructured optoelectronic devices. In this study, we harness the electric and magnetic resonances of such antennas to achieve a very strong dependence of the optical properties on the external environment...
December 15, 2017: Science
Mehrnoosh Sadeghipari, Alireza Mashayekhi, Shamsoddin Mohajerzadeh
Herein, we report successful deposition of aluminum oxide films on the silicon nanowires (SiNWs) to realize core shell silicon-based lithium-ion battery (LIB) anodes. By means of a reactive ion etching (RIE), it has been possible to form an ultra-thin layer of Al2O3 on SiNWs through hydrogen plasma. This deposition technique leads to the formation of tiny holes on the surface of the Al2O3 layer while introducing the pore sites into the inner silicon material without damaging the whole structure. SiNW@Al2O3 core shell nanostructures were used as the effective anode materials and showed a superior electrochemical performance compared to conventional SiNWs...
December 12, 2017: Nanotechnology
Yin Fang, Yuanwen Jiang, Mathew J Cherukara, Fengyuan Shi, Kelliann Koehler, George Freyermuth, Dieter Isheim, Badri Narayanan, Alan W Nicholls, David N Seidman, Subramanian K R S Sankaranarayanan, Bozhi Tian
Large-scale assembly of individual atoms over smooth surfaces is difficult to achieve. A configuration of an atom reservoir, in which individual atoms can be readily extracted, may successfully address this challenge. In this work, we demonstrate that a liquid gold-silicon alloy established in classical vapor-liquid-solid growth can deposit ordered and three-dimensional rings of isolated gold atoms over silicon nanowire sidewalls. We perform ab initio molecular dynamics simulation and unveil a surprising single atomic gold-catalyzed chemical etching of silicon...
December 8, 2017: Nature Communications
Jie Li, Gen He, Ueno Hiroshi, Wenzhe Liu, Hiroyuki Noji, Chuanmin Qi, Xuefeng Guo
F1-ATPase (F1) is a bidirectional molecular motor that hydrolyzes nearly all ATPs to fuel the cellular processes. Optical observation of labelled F1 rotation against the α3β3 hexamer ring revealed the sequential mechanical rotation steps corresponding to ATP binding/ADP release and ATP hydrolysis/Pi release. These substeps originate from the F1 rotation but with heavy load on the γ shaft due to fluorescent labelling and the photophysical limitation of an optical microscope, which hampers better understanding of the intrinsic kinetic behavior of ATP hydrolysis...
December 7, 2017: ACS Nano
Jheng-Yi Li, Chia-Hsiang Hung, Chia-Yun Chen
Metal-assisted chemical etching (MaCE) has been widely employed for the fabrication of regular silicon (Si) nanowire arrays. These features were originated from the directional etching of Si preferentially along <100> orientations through the catalytic assistance of metals, which could be gold, silver, platinum or palladium. In this study, the dramatic modulation of etching profiles toward pyramidal architectures was undertaken by utilizing copper as catalysts through a facile one-step etching process, which paved the exceptional way on the texturization of Si for advanced photovoltaic applications...
December 7, 2017: Scientific Reports
Xingyan Zhao, Peng Tu, Jiajing He, Hong Zhu, Yaping Dan
Optoelectronically probing the trap state density of single nanoscale devices is a powerful in situ nondestructive technique that is of significance for developing high gain photoconductors by surface engineering. However, the previously demonstrated optoelectronic methods are based on the exponential transient photoresponse assumption and only trap states in a very narrow bandgap region can be probed. In this Letter, we demonstrate a cryogenic technique that is capable of measuring the density of surface trap states in the full half bandgap without the exponential transient photoresponse assumption...
December 6, 2017: Nanoscale
Sharon Lefler, Roi Vizel, Ella Yeor, Eran Granot, Omri Heifler, Moria Kwiat, Vadim Krivitsky, Miguel Weil, Yuval E Yaish, Fernando Patolsky
Silicon-based photodetectors cannot distinguish between different wavelengths. Therefore, these detectors relay on color-specific filters to achieve color separation. Color filters add complexity to color sensitive device fabrication, and hinder miniaturization of such devices. Here we report an ultra-small (as small as ~20 nm by 300 nm), red-green-blue-violet (RGBV) filter-free spectrally-gated FET (SGFET) detectors. These photodetectors are based on organic-SiNW hybrid FET devices, capable of detecting specific visible wavelength spectrum with FWHM under 100 nm...
December 4, 2017: Nano Letters
Gen He, Jie Li, Chuanmin Qi, Xuefeng Guo
Establishing low-cost, high-throughput, simple, and accurate single nucleotide polymorphism (SNP) genotyping techniques is beneficial for understanding the intrinsic relationship between individual genetic variations and their biological functions on a genomic scale. Here, a straightforward and reliable single-molecule approach is demonstrated for precise SNP authentication by directly measuring the fluctuations in electrical signals in an electronic circuit, which is fabricated from a high-gain field-effect silicon nanowire decorated with a single hairpin DNA, in the presence of different target DNAs...
November 2017: Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
Alon Kosloff, Eran Granot, Zahava Barkay, Fernando Patolsky
The highly-controlled formation of 'radial' silicon/NiSi core-shell nanowire heterostructures has been demonstrated for the first time. Here, we investigated the 'radial' diffusion of nickel atoms into crystalline nanoscale silicon pillar cores, followed by nickel silicide phase formation and the creation of a well-defined shell structures. The described approach is based on a two-step thermal process, which involves metal diffusion at low temperatures in the range of 200-400oC, followed by a thermal curing step at a higher temperature of 400oC...
December 3, 2017: Nano Letters
Aiyeshah Alhodaib, Yasir Noori, Peter J Carrington, Ana M Sanchez, Michael Dermot Thompson, Robert J Young, Anthony Krier, Andrew Marshall
There is considerable interest in the development of InAsSb based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong non-radiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multi-quantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature...
November 30, 2017: Nano Letters
Zhaoguo Xue, Mei Sun, Taige Dong, Zhiqiang Tang, Yaolong Zhao, Junzhuan Wang, Xianlong Wei, Linwei Yu, Qing Chen, Jun Xu, Yi Shi, Kunji Chen, Pere Roca I Cabarrocas
Line-shape engineering is a key strategy to endow extra flexibility and stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns, with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultra-long c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been well established, while high resolution transmission electron microscopy analysis reveals a high quality mono-like crystallinity in the line-shaped engineered SiNW springs...
November 30, 2017: Nano Letters
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