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Silicon nanowire

Imran Hanif, Osmane Camara, Matheus Araújo Tunes, Robert William Harrison, Graeme Greaves, Stephen E Donnelly, Jonathan A Hinks
The miniaturization of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion-beam-induced deformation effects...
May 21, 2018: Nanotechnology
G Flynn, K Stokes, K M Ryan
Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics...
May 18, 2018: Chemical Communications: Chem Comm
Ankur Anand, Chih-Hung Chi, Subhasree Banerjee, Ming-Yi Chou, Fan-Gang Tseng, Chien-Yuan Pan, Yit-Tsong Chen
The Zn2+ stored in the secretory vesicles of glutamatergic neurons is coreleased with glutamate upon stimulation, resulting in the elevation of extracellular Zn2+ concentration (CZn2+ex). This elevation of CZn2+ex regulates the neurotransmission and facilitates the fibrilization of amyloid-β (Aβ). However, the exact CZn2+ex surrounding neurons under (patho)physiological conditions is not clear and the connection between CZn2+ex and the Aβ fibrilization remains obscure. Here, a silicon nanowire field-effect transistor (SiNW-FET) with the Zn2+ -sensitive fluorophore, FluoZin-3 (FZ-3), to quantify the CZn2+ex in real time is modified...
May 16, 2018: Small
Zengtao Bao, Tong Wang
Ultra-sensitive and quantitative analysis of proteins, nucleic acid, virus and other biochemical species are critical technologies for effective dianosis of disease, as well as medical studies. Silicon nanowires field-effect transistor (SiNWs-FET) biosensor is one of the most promising powerful platforms for label-free, real-time, ultra-sensitive detection of analyte. Here, the working principle of SiNWs-FET biosensor and the applications of SiNWs-FET biosensors in medicine were introduced. Moreover, the methods for enhancing the sensitivity of SiNWs-FET biosensor were discussed...
October 1, 2017: Sheng Wu Yi Xue Gong Cheng Xue za Zhi, Journal of Biomedical Engineering, Shengwu Yixue Gongchengxue Zazhi
Melania Banu, Monica Simion, Marian C Popescu, Pericle Varasteanu, Mihaela Kusko, Ileana C Farcasanu
Novel microarray platform for single nucleotide polymorphisms (SNPs) detection has been developed using silicon nanowires (SiNWs) as support and two different surface modification methods for attaining the necessary functional groups. Accordingly, we compared the detection specificity and stability over time of the probes printed on SiNWs modified with (3-aminopropyl)triethoxysilane (APTES) and glutaraldehyde (GAD), or coated with a simpler procedure using epoxy-based SU-8 photoresist. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) were used for comparative characterization of the unmodified and coated SiNWs...
August 1, 2018: Talanta
Duy Phu Tran, Thuy Thi Thanh Pham, Bernhard Wolfrum, Andreas Offenhäusser, Benjamin Thierry
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications...
May 11, 2018: Materials
Galia Pozina, Azat R Gubaydullin, Maxim I Mitrofanov, Mikhail A Kaliteevski, Iaroslav V Levitskii, Gleb V Voznyuk, Evgeniy E Tatarinov, Vadim P Evtikhiev, Sergey N Rodin, Vasily N Kaliteevskiy, Leonid S Chechurin
We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed...
May 8, 2018: Scientific Reports
Ludovic Desplanque, Alexandre Bucamp, David Troadec, Gilles Patriarche, Xavier Wallart
In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic Hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces...
May 8, 2018: Nanotechnology
Yuan Yan, Jiamin Wang, Haofan Yang, Yuntian Chen, Yun Xiao, Jing Xu, Yu Yu, Xinliang Zhang
We investigate the potential of an ultrafast transverse mode switch based on silicon on insulator (SOI) platform for the switching applications in the spatial division multiplexing (SDM) systems. The impact of waveguide geometry, operation wavelength, pulse width of the pump and probe waves, as well as the temporal delay between the pulses are discussed with a special focus on the temporal switching windows of the switch. The optimized switching performances are further applied to a switching node in a hybrid optical time division-multiplexing (OTDM) and SDM system...
April 2, 2018: Optics Express
Zhongwei Wu, Yin Xu
The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region...
April 20, 2018: Applied Optics
Mehrnoosh Sadeghipari, Mohammad Ala Mohajerzadeh, Mohammadreza Hajmirzaheydarali, Alireza Mashayekhi, Shamsoddin Mohajerzadeh
Hollow inorganic nanostructures have drawn great attention due to their fascinating features, such as large surface area, high loading capacity, and high permeability. The formation, characterization, and application of partially and entirely hollow structure by applying a Si-based reactive ion deposition and etching method on silicon nanowire as a template are reported. This fabrication technique is extended to a stainless steel substrate to be used as the binder-free anode for high capacity and high rate lithium-ion batteries...
April 30, 2018: Small
Kaiyan Yu, Jingang Yi, Jerry W Shan
The automated sorting and positioning of nanowires and nanotubes is essential to enabling the scalable manufacturing of nanodevices for a variety of applications. However, two fundamental challenges still remain: (i) automated placement of individual nanostructures in precise locations, and (ii) the characterization and sorting of highly variable nanomaterials to construct well-controlled nanodevices. Here, we propose and demonstrate an integrated, electric-field based method for the simultaneous automated characterization, manipulation, and assembly of nanowires (ACMAN) with selectable electrical conductivities into nanodevices...
April 30, 2018: Lab on a Chip
Xu Chen, Qinsong Bi, Muhammad Sajjad, Xu Wang, Yang Ren, Xiaowei Zhou, Wen Xu, Zhu Liu
In this study, one-dimensional porous silicon nanowire (1D⁻PSiNW) arrays were fabricated by one-step metal-assisted chemical etching (MACE) to etch phosphorus-doped silicon wafers. The as-prepared mesoporous 1D⁻PSiNW arrays here had especially high specific surface areas of 323.47 m²·g-1 and were applied as anodes to achieve fast charge⁻discharge performance for lithium ion batteries (LIBs). The 1D⁻PSiNWs anodes with feature size of ~7 nm exhibited reversible specific capacity of 2061.1 mAh·g-1 after 1000 cycles at a high current density of 1...
April 27, 2018: Nanomaterials
Samik Mukherjee, Uri Givan, Stephan Senz, María de la Mata, Jordi Arbiol, Oussama Moutanabbir
Nanowires are a versatile platform to investigate and harness phonon and thermal transport phenomena in nanoscale systems. With this perspective, we demonstrate herein the use of crystal phase and mass disorder as effective degrees of freedom to manipulate the behavior of phonons and control the flow of local heat in silicon nanowires. The investigated nanowires consist of isotopically pure and isotopically mixed nanowires bearing either a pure diamond cubic or a cubic-rhombohedral polytypic crystal phase. The nanowires with tailor-made isotopic compositions were grown using isotopically enriched silane precursors 28SiH4, 29SiH4, and 30SiH4 with purities better than 99...
April 25, 2018: Nano Letters
Hanhui Liu, Mengping Li, Richard B Kaner, Songyan Chen, Qibing Pei
Owing to the need for portable and sustainable energy sources and the development trend for microminiaturization and multifunctionalization in the electronic components, the study of integrated self-charging power packs has attracted increasing attention. A new self-charging power pack consisting of a silicon nanowire array/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hybrid solar cell and a laser-scribed graphene (LSG) supercapacitor has been fabricated. The Si nanowire array/PEDOT:PSS hybrid solar cell structure exhibited a high power conversion efficiency (PCE) of 12...
April 25, 2018: ACS Applied Materials & Interfaces
Tuomas Haggren, Vladislav Khayrudinov, Veer Dhaka, Hua Jiang, Ali Shah, Maria Kim, Harri Lipsanen
We report the use of black silicon (bSi) as a growth platform for III-V nanowires (NWs), which enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy. In addition, a new isolated growth regime is reported for self-catalyzed InAs NWs at record-low temperatures of 280 °C-365 °C, where consistently rectangular [-211]-oriented NWs are obtained. The bSi substrate is shown to support the growth of additionally GaAs and InP NWs, as well as heterostructured NWs...
April 23, 2018: Scientific Reports
Liang Fang, Oliver E C Gould, Liudmila Lysyakova, Yi Jiang, Tilman Sauter, Oliver Frank, Tino Becker, Michael Schossig, Karl Kratz, Andreas Lendlein
The implementation of shape-memory effects (SME) in polymeric micro- or nano-objects currently relies on the application of indirect macroscopic manipulation techniques, for example, stretchable molds or phantoms, to ensembles of small objects. Here, we introduce a method capable of the controlled manipulation and SME quantification of individual micro- and nano-objects in analogy to macroscopic thermomechanical test procedures. An atomic force microscope was utilized to address individual electro-spun poly(ether urethane) (PEU) micro- or nanowires freely suspended between two micropillars on a micro-structured silicon substrate...
April 23, 2018: Chemphyschem: a European Journal of Chemical Physics and Physical Chemistry
Alex Henning, Vinod K Sangwan, Hadallia Bergeron, Itamar Balla, Zhiyuan Sun, Mark C Hersam, Lincoln J Lauhon
Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection...
April 23, 2018: ACS Applied Materials & Interfaces
Vlasta Mohaček-Grošev, Hrvoje Gebavi, Alois Bonifacio, Valter Sergo, Marko Daković, Danica Bajuk-Bogdanović
Modern diagnostic tools ever aim to reduce the amount of analyte and the time needed for obtaining the result. Surface-enhanced Raman spectroscopy is a method that could satisfy both of these requirements, provided that for each analyte an adequate substrate is found. Here we demonstrate the ability of gold-sputtered silicon nanowires (SiNW) to bind p-mercaptobenzoic acid in 10-3 , 10-4 and 10-5 M and adenine in 30 and 100μM concentrations. Based on the normal mode analysis, presented here for the first time, the binding of p-mercaptobenzoic acid is deduced...
April 10, 2018: Spectrochimica Acta. Part A, Molecular and Biomolecular Spectroscopy
Daryoush Shiri, Amit Verma, Reza Nekovei, Andreas Isacsson, C R Selvakumar, M P Anantram
Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy subbands. This effect was observed in semiconductors like GaAs which has a direct bandgap of very low effective mass and an indirect subband of high effective mass which lies ~300 meV above the former. In contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital (sp3 d5 s* ) Tight Binding and Ensemble Monte Carlo (EMC) methods we show for the first time that (a) Gunn Effect can be induced in silicon nanowires (SiNW) with diameters of 3...
April 19, 2018: Scientific Reports
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