Ali Al Hassan, Mahmoud AlHumaidi, Jochen Kalt, Reinhard Schneider, Erich Müller, Taseer Anjum, Azat Khadiev, Dmitri Novikov, Ullrich Pietsch, Tilo Baumbach
We report on the fabrication of a novel design of GaAs/(In,Ga)As/GaAs radial nanowire heterostructures on a Si 111 substrate, where, for the first time, the growth of inhomogeneous shells on a lattice mismatched core results in straight nanowires instead of bent. Nanowire bending caused by axial tensile strain induced by the (In,Ga)As shell on the GaAs core is reversed by axial compressive strain caused by the GaAs outer shell on the (In,Ga)As shell. Progressive nanowire bending and reverse bending in addition to the axial strain evolution during the two processes are accessed by in situ by X-ray diffraction...
April 17, 2024: Nanotechnology