Read by QxMD icon Read

Faraday Discussions

R Stanley Williams
The Faraday Discussion on New memory paradigms: memristive phenomena and neuromorphic systems was held from October 15-17 on the campus of the Rheinisch-Westfälische Technische Hochschule Aachen University, or RWTH Aachen University, under the auspices of the Royal Society of Chemistry. The Discussion brought together over 100 experts and students from over 20 different countries to present, question, and debate the latest breakthroughs in a field that is exhibiting dramatic growth. There were a large number of excellent oral presentations and posters covering the topics of the Discussion, and the conversations among the participants were lively and informative...
January 11, 2019: Faraday Discussions
Isha Gupta, Alexantrou Serb, Ali Khiat, Maria Trapatseli, Themistoklis Prodromakis
Electrophysiological techniques have improved substantially over the past years to the point that neuroprosthetics applications are becoming viable. This evolution has been fuelled by the advancement of implantable microelectrode technologies that have followed their own version of Moore's scaling law. Similarly to electronics, however, excessive data-rates and strained power budgets require the development of more efficient computation paradigms for handling neural data in situ; in particular the computationally heavy task of events classification...
December 19, 2018: Faraday Discussions
Zlatko Bacic, David Benoit, Malgorzata Biczysko, Joel Bowman, Stephen Bradforth, Timothy Burd, Gilberte Chambaud, David Clary, Claudine Crépin, Martin Dracinsky, Peter Felker, Ingo Fischer, Francesco Gianturco, Majdi Hochlaf, Karel Kouril, Irena Kratochvilova, ChunMei Liu, Anne McCoy, Jun Miyazaki, Halima Mouhib, Jeremy Richardson, Petr Slaviček, Thierry Stoecklin, Krzysztof Szalewicz, Ad van der Avoird, Anne Zehnacker-Rentien
No abstract text is available yet for this article.
December 6, 2018: Faraday Discussions
Dmitri Babikov, David Benoit, Joel Bowman, Timothy Burd, David Clary, Robert Donovan, Ingo Fischer, Francesco Gianturco, Majdi Hochlaf, Susmita Kar, Adam Kirrander, Stephen Leone, Thomas Malcomson, Uwe Manthe, Anne B McCoy, Jens Petersen, Jeremy Richardson, Petr Slavíček, Thierry Stoecklin, Krzysztof Szalewicz, Ad van der Avoird, Roland Wester, Graham Worth, Anne Zehnacker-Rentien
No abstract text is available yet for this article.
December 4, 2018: Faraday Discussions
Loren Ban, Joel Bowman, Stephen Bradforth, Gilberte Chambaud, Martin Dracinsky, Ingo Fischer, Robert Góra, Majdi Hochlaf, Mikolaj Janicki, Adam Kirrander, Anne B McCoy, Jens Petersen, Jeremy Richardson, Petr Slavicek, Krzysztof Szalewicz, Anne Zehnacker-Rentien
No abstract text is available yet for this article.
December 4, 2018: Faraday Discussions
Zlatko Bacic, David Benoit, Matthieu Besemer, Joel Bowman, Stephen Bradforth, David Clary, Robert Donovan, Ingo Fischer, Francesco Gianturco, Majdi Hochlaf, Paul Houston, Peter Knowles, Stephen Leone, Roberto Linguerri, Uwe Manthe, Anne B McCoy, Jens Petersen, Jeremy Richardson, Xiao Shan, Petr Slavíček, Thierry Stoecklin, Krzysztof Szalewicz, Ad van der Avoird, Roland Wester, Graham Worth, Anne Zehnacker-Rentien
No abstract text is available yet for this article.
December 3, 2018: Faraday Discussions
Ad van der Avoird
The Faraday Discussion on quantum effects in small molecular systems was held on 10th - 12th September 2018 in Edinburgh, UK. It reflected a wide variety of new theoretical and experimental developments, which provide insights and methods applicable to larger systems as well.
December 3, 2018: Faraday Discussions
K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang
Hardware artificial neural network (ANN) systems with high density synapse array devices can perform massive parallel computing for pattern recognition with low power consumption. To implement a neuromorphic system with on-chip training capability, we need to develop an ideal synapse device with various device requirements, such as scalability, MLC characteristics, low power operation, data retention, and symmetric/linear conductance changes under potentiation/depression modes. Although various devices have been proposed for synapse applications, they have limitations for application in neuromorphic systems...
November 14, 2018: Faraday Discussions
Ella M Gale
Memristors have been compared to neurons and synapses, suggesting they would be good for neuromorphic computing. A change in voltage across a memristor causes a current spike which imparts a short-term memory to a memristor, allowing for through-time computation, which can do arithmetical operations and sequential logic, or model short-time habituation to a stimulus. Using simple physical rules, simple logic gates such as XOR, and novel, more complex, gates such as the arithmetic full adder (AFA) can be instantiated in sol-gel TiO2 plastic memristors...
November 12, 2018: Faraday Discussions
Yago Gonzalez-Velo, Arshey Patadia, Hugh J Barnaby, Michael N Kozicki
Chalcogenide-based, programmable metallization cells (PMC) cells have been characterized after exposure to increasing levels of absorbed dose (i.e., ionizing radiation exposure). We found, and show here for the first time, that total absorbed dose effects induce a slight modification of the switching phenomena with a moderate increase of the programmable low resistance state (LRS) of the PMCs after repeated switching depending on the processing conditions, while it does not impact the state programmed before exposure...
November 12, 2018: Faraday Discussions
Ruomeng Huang, Gabriela P Kissling, Reza Kashtiban, Yasir J Noori, Katarina Cicvarić, Wenjian Zhang, Andrew L Hector, Richard Beanland, David C Smith, Gillian Reid, Philip N Bartlett, C H Kees de Groot
We have recently reported a new method for the electrodeposition of thin film and nanostructured phase change memory (PCM) devices from a single, highly tuneable, non-aqueous electrolyte. The quality of the material was confirmed by phase cycling via electrical pulsed switching of both 100 nm nano-cells and thin film devices. This method potentially allows deposition into extremely small confined cells down to less than 5 nm, 3D lay-outs that require non-line-of-sight techniques, and seamless integration of selector devices...
November 9, 2018: Faraday Discussions
Benedikt Kersting, Martin Salinga
The market launch of Intel's 3D XPoint™ proves phase change technology has grown mature. Besides storing information in a fast and non-volatile way, phase change memories (PCMs) may facilitate neuromorphic and in-memory computing. In order to establish PCM as a lasting element of the electronics ecosystem, scalability to future technology nodes needs to be assured. Continued miniaturization of PCM devices is not only prescribed in order to achieve memories with higher data density and neuromorphic hardware capable of processing larger amounts of information...
November 7, 2018: Faraday Discussions
Silvia Gabardi, Gabriele G Sosso, Joerg Behler, Marco Bernasconi
Strategies to reduce the incubation time for crystal nucleation and thus the stochasticity of the set process are of relevance for the operation of phase change memories in ultra-scaled geometries. With these premises, in this work we investigate the crystallization kinetics of the phase change compound GeTe. We have performed large scale molecular dynamics simulations using an interatomic potential, generated previously from a neural network fitting of a database of ab initio energies. We have addressed the crystallization of models of amorphous GeTe annealed at different temperatures above the glass transition...
October 31, 2018: Faraday Discussions
Nobuki Inoue, Hisao Nakamura
We investigated the resistive switching mechanism between the high-resistance state (HRS) and the low-resistance state (LRS) of the GeTe-Sb2Te3 (GST) superlattice. First-principles calculations were performed to identify the structural transition pathway and to evaluate the current-voltage (I-V) characteristics of the GST device cell. After determining the atomistic structures of the stable structural phases of the GST superlattice, we found the structural transition pathways and the transition states of possible elementary processes in the device, which consisted of a thin film of GST superlattice and semi-infinite electrodes...
October 31, 2018: Faraday Discussions
Yusuke Hiruma, Kai Yoshikawa, Masa-Aki Haga
A new type of memristor inspired by bio-membranes is presented, based on the proton movement resulting from proton-coupled electron transfer (PCET) processes in dinuclear Ru complexes, whereby a two-terminal device based on said Ru complexes and a proton-conducting polymer was constructed as a proof-of-concept. Two ITO electrodes were modified separately with dinuclear Ru complexes that bear tetraphosphonic acid linkers at both ends and a 2,6,2',6'-tetrakis(benzimidazol-2-yl)-4,4'-bipyridine (RuNH-OH) or 1,3,1',3'-tetrakis(benzimidazol-2-yl)-5,5'-biphenyl (RuCH-OH) bridging ligand, and both ITO electrodes exhibit PCET processes with different Ru(ii/iii) redox potentials and pKa values...
October 30, 2018: Faraday Discussions
Anthony J Kenyon, Manveer Singh Munde, Wing H Ng, Mark Buckwell, Dovydas Joksas, Adnan Mehonic
We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages...
October 29, 2018: Faraday Discussions
Hongchu Du, Chun-Lin Jia, Joachim Mayer
Recently, extended mixed dislocations were observed at a [001]/(100) low-angle tilt grain boundary of a SrTiO3 bicrystal because of a slight twist between the two crystal parts. The b = a[201]/(100) mixed dislocations at the grain boundary dissociate into three dislocations with Burgers vector b of a/2[101], a[100], and a/2[101], respectively. A structure model has been proposed in particular for the dislocation cores of the two partials with b = a/2[101] based on the high-angle annular dark-field (HAADF) images acquired by scanning transmission electron microscopy (STEM)...
October 29, 2018: Faraday Discussions
Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed operation, the high density CMOS-compatible integration, and the high cycling endurance, the ReRAM technology is becoming a strong candidate for high-density storage arrays and novel in-memory computing systems. However, ReRAM suffers from cycle-to-cycle switching variability and noise-induced resistance fluctuations, leading to insufficient read margin between the programmed resistive states...
October 26, 2018: Faraday Discussions
Christoph Baeumer, Thomas Heisig, Benedikt Arndt, Katharina Skaja, Francesco Borgatti, Francesco Offi, Federico Motti, Giancarlo Panaccione, Rainer Waser, Stephan Menzel, Regina Dittmann
Resistive switching oxides are highly attractive candidates to emulate synaptic behaviour in artificial neural networks. Whilst the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest, since their gradual SET and RESET processes provide an analogue-type of switching required to take over synaptic functionality. Interface-type switching devices often consist of bilayers of one highly mixed-conductive oxide layer and one highly insulating tunnel oxide layer...
October 26, 2018: Faraday Discussions
Dirk J Wouters, Stephan Menzel, Jonathan A J Rupp, Tyler Hennen, Rainer Waser
The I-V switching curves of bipolar switching non-volatile ReRAM devices show peculiar characteristics, such as an abrupt ON switching and the existence of a universal switching voltage. This switching behavior has been explained by the presence of a filamentary process, in which the width of a conductive filament changes during switching resulting in different resistance states. Vice versa, similar (ON) switching behavior, e.g. that of volatile switching Cr-doped V2O3 devices, has been interpreted as an indication of the presence of similar filamentary switching...
October 26, 2018: Faraday Discussions
Fetch more papers »
Fetching more papers... Fetching...
Read by QxMD. Sign in or create an account to discover new knowledge that matter to you.
Remove bar
Read by QxMD icon Read

Search Tips

Use Boolean operators: AND/OR

diabetic AND foot
diabetes OR diabetic

Exclude a word using the 'minus' sign

Virchow -triad

Use Parentheses

water AND (cup OR glass)

Add an asterisk (*) at end of a word to include word stems

Neuro* will search for Neurology, Neuroscientist, Neurological, and so on

Use quotes to search for an exact phrase

"primary prevention of cancer"
(heart or cardiac or cardio*) AND arrest -"American Heart Association"